HIT 2SC4964 Datasheet
2SC4964
Silicon NPN Epitaxial
Application
VHF / UHF RF switch
Features
• Low Ron and high performance for RF switch.
• Capable of high density mounting.
Outline
ADE-208-005
1st. Edition
MPAK
3
1
2
1. Emitter
2. Base
3. Collector
2SC4964
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio h
Collector to emitter saturation
I
V
CBO
CEO
EBO
FE
CE(sat)
voltage
Collector output capacitance Cob — 1.2 1.6 pF VCB = 5 V, IE = 0, f = 1 MHz
On resistance Ron — 2.0 — Ω IB = 2.5 mA, f = 1 kHz
Note: Marking is “YV–”.
12——V I
——1 µAVCB = 10 V, IE = 0
——1 mAV
——10µAVEB = 3 V, IC = 0
100 250 600 VCE = 5 V, IC = 5 mA
— 200 300 mV IC = 80 mA, IB = 5 mA
12 V
8V
3V
100 mA
150 mW
= 10 µA, IE = 0
C
= 8 V, RBE = ∞
CE
2
150
(mW)
C
100
Maximum Collector Dissipation Curve
500
FE
400
300
2SC4964
DC Current Transfer Ratio vs.
Collector Current
V = 5V
CE
50
Collector Power Dissipation P
0
Ambient Temperature Ta (°C)
Collector Output Capacitance vs.
Collector to Base Voltage
2.8
2.4
2.0
1.6
1.2
Collector Output Capacitance Cob (pF)
0.8
0.5
12 51020
Collector to Base Voltage V (V)
I = 0
E
f = 1 MHz
CB
200
100
DC Current Transfer Ratio h
0
15010050
12 51020 50
Collector Current I (mA)
C
100
Gain Bandwidth Product vs.
Collector Current
2.0
V = 5V
CE
1.6
T
1.2
0.8
0.4
Gain Bandwidth Product f (GHz)
0
12 51020 50100
Collector Current I (mA)
C
3
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