HIT 2SC4926 Datasheet
2SC4926
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Features
• High gain bandwidth product
fT = 11 GHz Typ
• High gain, low noise figure
PG = 16.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz
Outline
MPAK-4
2
3
1
4
1. Collector
2. Emitter
3. Base
4. Emitter
2SC4926
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio h
CBO
I
CEO
EBO
FE
Collector output capacitance Cob — 0.6 1.1 pF VCB = 5 V, IE = 0,
Gain bandwidth product f
S21 Parameter
T
S
21
Power gain PG 13.5 16.5 — dB VCE = 5 V, IC = 20 mA,
Noise figure NF — 1.1 2.0 dB VCE = 5 V, IC = 5 mA,
Note: Marking is “YD–”.
15——V I
——10µAVCB = 12 V, IE = 0
——1 mAV
——10µAVEB = 1.5 V, IC = 0
50 120 250 VCE = 5 V, IC = 20 mA
8.0 11.0 — GHz VCE = 5 V, IC = 20 mA
— 16 — dB V
15 V
8V
1.5 V
50 mA
150 mW
= 10 µA, IE = 0
C
= 8 V, RBE = ∞
CE
f = 1 MHz
= 5 V, IC = 20 mA,
CE
f = 1000 MHz
f = 900 MHz
f = 900 MHz
Attention: This is electrostatic sensitive device.
2
150
(mW)
C
100
Maximum Collector Dissipation Curve
200
FE
160
120
DC Current Transfer Ratio
vs. Collector Current
V = 5V
CE
2SC4926
50
Collector Power Dissipation P
0
Ambient Temperature Ta (°C)
Gain Bandwidth Product
vs. Collector Current
12
V = 5 V
CE
10
T
8
6
4
2
Gain Bandwidth Product f (GHz)
0
12 51020 50
Collector Current I (mA)
C
80
40
DC Current Transfer Ratio h
0
15010050
12 51020 50
Collector Current I (mA)
C
Collector Output Capacitance vs.
Collector to Base Voltage
0.9
I = 0
E
f = 1 MHz
0.8
0.7
0.6
0.5
Collector Output Capacitance Cob (pF)
0.4
0.5
12 51020
Collector to Base Voltage V (V)
CB
3
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