HIT 2SC4913 Datasheet
Application
High voltage amplifier
Features
• High breakdown voltage
• V
(BR)CEO
= 2000 V min
Outline
2SC4913
Silicon NPN Triple Diffused
TO-220AB
1. Base
2. Collector
1
2
3
(Flange)
3. Emitter
2SC4913
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current I
Collector power dissipation P
CBO
CEO
EBO
C
C(peak)
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector cutoff current I
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio h
Collector to emitter saturation
voltage
V
CES
CEO
EBO
FE
CE(sat)
— — 500 µAVCE = 2000 V, RBE = 0
——5 mAVCE = 2000 V, RBE = ∞
— — 500 µAVEB = 6 V, IC = 0
10 — — VCE = 5 V, IC = 1 mA
— — 5.0 V IC = 10 mA, IB = 2 mA
2000 V
2000 V
6V
20 mA
40 mA
1.5 W
Maximum Collector Power Dissipation Curve
2.0
1.5
1.0
0.5
Collector Power Dissipation Pc (W)
0
50 100 150 200
Ambient Temperature Ta (°C)
2
Area of Safe Operation
100
1 shot pulse
50
ic(peak)
Ta = 25°C
Pw = 1 ms
C
20
I max
C
10 ms
DC Operation
(Tc = 25°C)
10
0.5
Collector Current I (mA)
0.2
0.1
100 200 500 1000 2000 5000
Collector to Emitter Voltage V (V)
CE
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