HIT 2SB716A, 2SB716, 2SB715 Datasheet
2SB715, 2SB716, 2SB716A
Silicon PNP Epitaxial
Application
• Low frequency high voltage amplifier
• Complementary pair with 2SD755, 2SD756 and 2SD756A
Outline
TO-92MOD
1. Emitter
2. Collector
3. Base
3
2
1
2SB715, 2SB716, 2SB716A
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol 2SB715 2SB716 2SB716A Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
2SB715 2SB716 2SB716A
Item Symbol Min Typ Max Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Collector cutoff current I
DC current transfer ratio h
Base to emitter voltage V
Collector to emitter
saturation voltage
Gain bandwidth product f
Collector output
capacitance
Note: 1. The 2SB715, 2SB716 and 2SB716A are grouped by h
2SB715, 2SB716 250 to 500 400 to 800
2SB716A 250 to 500 —
V
V
CBO
–100 — — –120 — — –140 — — V IC = –10 µA, IE = 0
(BR)CBO
–100 — — –120 — — –140 — — V IC = –1 mA,
(BR)CEO
— — –0.5 — — — — — — µAVCB = –80 V, IE = 0
— — — — — –0.5 — — –0.5 µAVCB = –100 V, IE = 0
*1250 — 800 250 — 800 250 — 500 VCE = –12 V,
FE1
h
V
T
125 — — 125 — — 125 — — VCE = –12 V,
FE2
— — –0.75 — — –0.75 — — –0.75 V VCE = –12 V,
BE
— — –0.2 — — –0.2 — — –0.2 V IC = –10 mA,
CE(sat)
— 150 — — 150 — — 150 — MHz VCE = –12 V,
Cob — 1.8 — — 1.8 — — 1.8 — pF VCB = –25 V, IE = 0,
DE
–100 –120 –140 V
–100 –120 –140 V
–5 –5 –5 V
–50 –50 –50 mA
750 750 750 mW
RBE = ∞
IC = –2 mA
IC = –10 mA
IC = –2 mA
IB = –1 mA
IC = –5 mA
f = 1 MHz
as follows.
FE1
2
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