HIT 2SB649A, 2SB649 Datasheet
2SB649, 2SB649A
Silicon PNP Epitaxial
Application
Low frequency power amplifier complementary pair with 2SD669/A
Outline
TO-126 MOD
1. Emitter
2. Collector
1
2
3
3. Base
2SB649, 2SB649A
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item Symbol 2SB649 2SB649A Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current I
Collector power dissipation P
CBO
CEO
EBO
C
C(peak)
C
1
P
*
C
Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C
Note: 1. Value at TC = 25°C
–180 –180 V
–120 –160 V
–5 –5 V
–1.5 –1.5 A
–3 –3 A
11W
20 20 W
2
2SB649, 2SB649A
Electrical Characteristics (Ta = 25°C)
2SB649 2SB649A
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current I
DC current transfer ratio h
Collector to emitter
saturation voltage
Base to emitter voltage V
Gain bandwidth product f
Collector output
capacitance
Notes: 1. The 2SB649 and 2SB649A are grouped by h
2. Pulse test
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
FE1
h
FE2
V
CE(sat)
BE
T
–180 — — –180 — — V IC = –1 mA, IE = 0
–120 — — –160 — — V IC = –10 mA, RBE = ∞
–5 — — –5 — — V IE = –1 mA, IC = 0
— — –10 — — –10 µAVCB = –160 V, IE = 0
1
*
60 — 320 60 — 200 VCE = –5 V,
I
= –150 mA
C
30 — — 30 — — VCE = –5 V,
I
= –500 mA*
C
——–1——–1V IC = –500 mA,
I
= –50 mA
B
— — –1.5 — — –1.5 V VCE = –5 V,
I
= –150 mA
C
— 140 — — 140 — MHz VCE = –5 V,
I
= –150 mA
C
2
Cob — 27 — — 27 — pF VCB = –10 V, IE = 0,
f = 1 MHz
as follows.
FE1
BCD
2SB649 60 to 120 100 to 200 160 to 320
2SB649A 60 to 120 100 to 200 —
3
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