HIT 2SB647A, 2SB647 Datasheet
2SB647, 2SB647A
Silicon PNP Epitaxial
Application
• Low frequency power amplifier
• Complementary pair with 2SD667/A
Outline
TO-92MOD
1. Emitter
2. Collector
3. Base
3
2
1
2SB647, 2SB647A
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol 2SB647 2SB647A Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current i
Collector power dissipation P
CBO
CEO
EBO
C
C(peak)
C
Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
2SB647 2SB647A
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base breakdown
voltage
Collector cutoff current I
DC current transfer ratio h
Collector to emitter
saturation voltage
Base to emitter voltage V
Gain bandwidth product f
Collector output capacitance Cob — 20 — — 20 — pF VCB = –10 V, IE = 0
Notes: 1. The 2SB647 and 2SB647A are grouped by h
2. Pulse test
BCD
2SB647 60 to 120 100 to 200 160 to 320
2SB647A 60 to 120 100 to 200 —
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
FE1
h
FE2
V
CE(sat)
BE
T
–120 — — –120 — — V IC = –10 µA, IE = 0
–80 — — –100 — — V IC = –1 mA, RBE = ∞
–5 — — –5 — — V IE = –10 µA, IC = 0
— — –10 — — –10 µAVCB = –100 V, IE = 0
*160 — 320 60 — 200 VCE = –5 V,
30 — — 30 — — VCE = –5 V,
— — –1 — — –1 V IC = –500 mA,
— — –1.5 — — –1.5 V VCE = –5 V,
— 140 — — 140 — MHz VCE = –5 V, IC = –150 mA
–120 –120 V
–80 –100 V
–5 –5 V
–1 –1 A
–2 –2 A
0.9 0.9 W
I
= –150 mA*
C
I
= –500 mA*
C
I
= –50 mA*
B
I
= –150 mA*
C
f = 1 MHz
as follows.
FE1
2
2
2
2
2
Loading...