HIT 2SB566A(K), 2SB566(K) Datasheet
2SB566(K), 2SB566A(K)
Silicon PNP Triple Diffused
Application
Low frequency power amplifier power switching complementary pair with 2SD476(K) and 2SD476A(K)
Outline
1. Base
2. Collector
(Flange)
3. Emitter
TO-220AB
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item Symbol 2SB566(K) 2SB566A(K) Unit
Collector to base voltage V
CBO
–70 –70 V
Collector to emitter voltage V
CEO
–50 –60 V
Emitter to base voltage V
EBO
–5 –5 V
Collector current I
C
–4 –4 A
Collector peak current I
C(peak)
–8 –8 A
Collector power dissipation PC*
1
40 40 W
Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C
Note: 1. Value at TC = 25°C.
2SB566(K), 2SB566A(K)
2
Electrical Characteristics (Ta = 25°C)
2SB566(K) 2SB566A(K)
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
–70 — — –70 — — V IC = –10 µA, IE = 0
Collector to emitter
breakdown voltage
V
(BR)CEO
–50 — — –60 — — V IC = –50 mA, RBE = ∞
Emitter to base
breakdown voltage
V
(BR)EBO
–5 — — –5 — — V IE = –10 µA, IC = 0
Collector cutoff current I
CBO
——–1——–1µAVCB = –50 V, IE = 0
DC current tarnsfer ratio h
FE1
*
1
60 — 200 60 — 200 VCE = –4 V, IC = –1 A
h
FE2
35 — — 35 — — VCE = –4 V, IC = –0.1 A
Collector to emitter
saturation voltage
V
CE(sat)
— — –1.0 — — –1.0 V IC = –2 A, IB = –0.2 A
Base to emitter
saturation voltage
V
BE(sat)
— — –1.2 — — –1.2 V IC = –2 A, IB = –0.2 A
Gain bandwidth product f
T
— 15 — — 15 — MHz VCE = –4 V, IC = –0.5 A
Turn on time t
on
— 0.3 — — 0.3 — µsVCC = –10.5 V
Turn off time t
off
— 3.0 — — 3.0 — µsIC = 10IB1 = –10IB2 =
Storage time t
stg
— 2.5 — — 2.5 — µs –0.5 A
Note: 1. The 2SB566(K) and 2SB566A(K) are grouped by h
FE1
as follows.
BC
60 to 120 100 to 200
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