HIT 2SB1494 Datasheet
2SB1494
Silicon PNP Triple Diffused
Application
Low frequency power amplifier complementary Pair with 2SD2256
Outline
TO-3P
2
1
1. Base
2. Collector
(Flange)
3. Emitter
1
2
3
3
I
D
2SB1494
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current I
Collector power dissipation PC*
CBO
CEO
EBO
C
C(peak)
1
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
C to E diode forward current ID*
1
Note: 1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Collector to emitter sustain
voltage
Emitter to base breakdown
voltage
Collector cutoff current I
DC current transfer ratio h
Collector to emitter saturation V
voltage V
Base to emitter saturation V
voltage V
Note: 1. Pulse test.
V
(BR)CBO
V
(BR)CEO
V
CEO(sus)
V
(BR)EBO
CBO
I
CEO
FE1
h
FE2
CE(sat)1
CE(sat)2
BE(sat)1
BE(sat)2
–120 — — V IC = –0.1 mA, IE = 0
–120 — — V IC = –25 mA, RBE = ∞
–120 — — V IC = –200 mA, RBE = ∞
–7 — — V IE = –50 mA, IC = 0
— — –10 µAVCB = –100 V, IE = 0
— — –10 VCE = –100 V, RBE = ∞
2000 — 20000 VCE = –4 V, IC = –12 A*
500 — — VCE = –4 V, IC = –25 A*
— — –2.0 V IC = –12 A, IB = –24 mA*
— — –3.5 IC = –25 A, IB = –250 mA*
— — –3.0 V IC = –12 A, IB = –24 mA
— — –4.5 IC = –25 A, IB = –250 mA*
–120 V
–120 V
–7 V
–25 A
–35 A
120 W
25 A
1
1
1
1
1
2
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