HIT 2SB1407(S) Datasheet
2SB1407(L)/(S)
Silicon PNP Epitaxial
Application
Low frequency power amplifier complementary Pair with 2SD2121(L)/(S)
Outline
4
1
2
3
4
3
2
1
1. Base
2. Collector
3. Emitter
4. Collector
DPAK
S Type
L Type
2SB1407(L)/(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
CBO
–35 V
Collector to emitter voltage V
CEO
–35 V
Emitter to base voltage V
EBO
–5 V
Collector current I
C
–2.5 A
Collector peak current I
C(peak)
–3 A
Collector power dissipation PC*
1
18 W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–35 — — V IC = –1 mA, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–35 — — V IC = –10 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
–5 — — V IE = –1 mA, IC = 0
Collector cutoff current I
CBO
— — –20 µAV
CB
= –35 V, IE = 0
DC current transfer ratio h
FE1
*
1
60 — 320 VCE = –2 V, IC = –0.5 A*
2
h
FE2
20 — — VCE = –2 V, IC = –1.5 A*
2
Base to emitter voltage V
BE
— — –1.5 V VCE = –2 V, IC = –1.5 A*
2
Collector to emitter saturation
voltage
V
CE(sat)
— — –1.0 V IC = –2 A, IB = –0.2 A*
2
Notes: 1. The 2SB1407(L)/(S) is grouped by h
FE1
as follows.
BCD
60 to 120 100 to 200 160 to 320
2. Pulse test.
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