HIT 2SB1400 Datasheet

Application

Low frequency power amplifier

Outline

TO-220FM

2SB1400

Silicon PNP Epitaxial

2

1

1. Base

2. Collector

1

2

3

3. Emitter
1 kΩ

(Typ)

400 Ω

(Typ)

3

2SB1400

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current I
Collector power dissipation P

CBO

CEO

EBO

C

C(peak)

C

1

P

*

C

Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. Value at TC = 25°C.

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Collector to base breakdown
voltage

Collector to emitter breakdown
voltage

Emitter to base breakdown
voltage

Collector cutoff current I

DC current transfer ratio h
Collector to emitter saturation V
voltage V
Base to emitter saturation V
voltage V

Note: 1. Pulse test.

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

CBO

I

CEO

FE

CE(sat)1

CE(sat)2

BE(sat)1

BE(sat)2

–120 — — V IC = –0.1 mA, IE = 0

–120 — — V IC = –25 mA, RBE = ∞

–7 — — V IE = –50 mA, IC = 0

— — –10 µAVCB = –100 V, IE = 0
— — –10 VCE = –100 V, RBE = ∞
1000 — 20000 VCE = –3 V, IC = –3 A*
— — –1.5 V IC = –3 A, IB = –6 mA*
— — –3.0 IC = –6 A, IB = –60 mA*
— — –2.0 V IC = –3 A, IB = –6 mA*
— — –3.5 IC = –6 A, IB = –60 mA*

–120 V
–120 V
–7 V
–6 A
–10 A
2W
25

1

1

1

1

1

See switching characteristic curve of 2SB727(K).

2