HIT 2SB1392 Datasheet
Application
Low frequency power amplifier
Outline
TO-220FM
2SB1392
Silicon PNP Triple Diffused
1. Base
2. Collector
1
2
3
3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current I
Collector power dissipation P
CBO
CEO
EBO
C
C(peak)
C
1
P
*
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C.
–70 V
–60 V
–5 V
–4 A
–8 A
2W
25
2SB1392
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current I
DC current transfer ratio h
Base to emitter voltage V
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Notes: 1. Pulse test.
2. The 2SB1392 is grouped by h
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
I
CEO
FE1
h
FE2
BE
V
CE(sat)
V
BE(sat)
–70 — — V IC = –10 µA, IE = 0
–60 — — V IC = –50 mA, RBE = ∞
–5 — — V IE = –10 µA, IC = 0
— — –10 µAVCB = –50 V, IE = 0
— — –10 VCE = –50 V, RBE = ∞
2
*
60 — 200 VCE = –4 V, IC = –1 A*
35 — — VCE = –4 V, IC = –0.1 A*
— — –1.0 V VCE = –4 V, IC = –1 A*
— — –1.0 V IC = –2.0 A, IB = –0.2 A*
— — –1.2 V IC = –2.0 A, IB = –0.2 A*
as follows.
FE1
1
1
1
1
1
BC
60 to 120 100 to 200
Maximum Collector Dissipation Curve
30
20
10
Collector power dissipation Pc (W)
0 50 100 150
Case Temperature T
(°C)
C
Area of Safe Operation
–10
iC
(peak)
–5
IC
(max)
–2
(A)
C
–1.0
–0.5
–0.2
–0.1
–0.05
Collector Current I
Ta = 25°C
1 Shot pulse
DC
1 ms
PW = 10 ms
Operation
(T
C
= 25°C)
–0.02
–0.01
–3 –10 –30 –100 –300
Collector to emitter Voltage V
CE
(V)
2