HIT 2SB1391 Datasheet

2SB1391

Silicon PNP Triple Diffused

Application

Power switching

Outline

TO-220FM

2

		1
	1.	Base
	2.	Collector
	3.	Emitter	200 Ω
1	2 3	2 kΩ
		(Typ)	(Typ)

3

2SB1391

Absolute Maximum Ratings (Ta = 25°C)

Item	Symbol	Ratings	Unit
Collector to base voltage	VCBO	–120	V
Collector to emitter voltage	VCEO	–120	V
Emitter to base voltage	VEBO	–7	V
Collector current	IC	–8	A
Collector peak current	IC(peak)	–12	A
Collector power dissipation	PC	2	W
	PC*1	25
Junction temperature	Tj	150	°C
Storage temperature	Tstg	–55 to +150	°C
Note: 1. Value at TC = 25°C.

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

V(BR)CBO

–120

—

—

V

I

C = –0.1 mA, IE = 0

voltage

Collector to emitter breakdown

V(BR)CEO

–120

—

—

V

I

C = –25 mA, RBE = ∞

voltage

Emitter to base breakdown

V(BR)EBO

–7

—

—

V

I

E = –50 mA, IC = 0

voltage

Collector cutoff current

ICBO

—

—

–10

A

VCB = –100 V, IE = 0

ICEO

—

—

–10

V

CE = –100 V, RBE = ∞

DC current transfer ratio

h

1000

—

20000

V

CE

= –3 V, I = –4 A*1

FE

C

Collector to emitter saturation

V

CE(sat)1

—

—

–1.5

V

I

C

= –4 A, I = –8 mA*1

B

voltage

V

CE(sat)2

—

—

–3.0

I

C

= –8 A, I = –80 mA*1

B

Base to emitter saturation

V

BE(sat)1

—

—

–2.0

V

I

C

= –4 A, I = –8 mA*1

B

voltage

V

BE(sat)2

—

—

–3.5

I

C

= –8 A, I = –80 mA*1

B

Note: 1. Pulse test.

See switching characteristic curve of 2SB791(K).

2