HIT 2SB1391 Datasheet

Application

Power switching

Outline

TO-220FM

2SB1391

Silicon PNP Triple Diffused

2

1

1. Base

2. Collector

1

2

3

3. Emitter
2 kΩ

(Typ)

200 Ω

(Typ)

3

2SB1391

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current I
Collector power dissipation P

CBO

CEO

EBO

C

C(peak)

C

1

P

*

C

Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. Value at TC = 25°C.

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Collector to base breakdown
voltage

Collector to emitter breakdown
voltage

Emitter to base breakdown
voltage

Collector cutoff current I

DC current transfer ratio h
Collector to emitter saturation V
voltage V
Base to emitter saturation V
voltage V

Note: 1. Pulse test.

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

CBO

I

CEO

FE

CE(sat)1

CE(sat)2

BE(sat)1

BE(sat)2

–120 — — V IC = –0.1 mA, IE = 0

–120 — — V IC = –25 mA, RBE = ∞

–7 — — V IE = –50 mA, IC = 0

— — –10 µAVCB = –100 V, IE = 0
— — –10 VCE = –100 V, RBE = ∞
1000 — 20000 VCE = –3 V, IC = –4 A*
— — –1.5 V IC = –4 A, IB = –8 mA*
— — –3.0 IC = –8 A, IB = –80 mA*
— — –2.0 V IC = –4 A, IB = –8 mA*
— — –3.5 IC = –8 A, IB = –80 mA*

–120 V
–120 V
–7 V
–8 A
–12 A
2W
25

1

1

1

1

1

See switching characteristic curve of 2SB791(K).

2

2SB1391

Maximum Collector Dissipation Curve

30

20

10

Collector power dissipation Pc (W)

0 50 100 150

Case Temperature T

(°C)

C

Typical Output Characteristics

–10

TC = 25°C

P

C

= 25 W

–5.0

(A)

C

–8

–6

–4.0

–3.0

–1.5

–1.0

–4

–0.5 mA

Collector Current I

–2

IB = 0

0

–1 –2 –3 –4 –5

Collector to emitter Voltage V

CE

–4.5

–3.5

–2.5

–2.0

(V)

Area of Safe Operation

–20

iC

(peak)

–10

IC

(max)

–5

(A)

C

–2
–1.0
–0.5

Ta = 25°C

–0.2

1 Shot pulse

–0.1

Collector Current I

DC

Operation

(T

C

= 25°C)

PW = 10 ms

1 µs

100 µs

1 ms

–0.05
–0.02

–0.3 –1.0 –3 –10 –30 –100 –300

Collector to emitter Voltage V

CE

(V)

DC Current Transfer Ratio vs.

Collector Current

10,000

FE

3,000

C

T

= 75°C

25°C

–25°C

1,000

V

= –3 V

300

CE

DC current transfer ratio h

100

–0.1 –0.3 –1.0 –3 –10

Collector current I

C

(A)

3

2SB1391

Saturation Voltage vs. Collector Current

–10

TC = 25°C

(V)

CE (sat)

V

Base to emitter saturation voltage

Collector to emitter saturation voltage

10

(°C/W)

3

j-c

1.0

0.3

Thermal resistance θ

0.1
1 m 10 m 100 m

lC/lB = 200

500

(V)

–1.0

BE (sat)

V

–3

V

BE (sat)

V

CE (sat)

–0.3

–0.1

–0.1 –0.3 –1.0 –3 –10

Collector current I

C

(A)

Transient Thermal Resistance

TC = 25°C

1.0 10 100 1,000

Time t (s)

200

4

10.0 ± 0.3

7.0 ± 0.3

φ

3.2 ± 0.2

0.6

2.8 ± 0.2

2.5 ± 0.2

Unit: mm

1.2 ± 0.2

1.4 ± 0.2

2.0 ± 0.3

0.7 ± 0.1

2.54 ± 0.52.54 ± 0.5

12.0 ± 0.3

5.0 ± 0.3

4.45 ± 0.3

2.5

Hitachi Code
JEDEC
EIAJ
Weight

17.0 ± 0.3

14.0 ± 1.0

0.5 ± 0.1

(reference value)

TO-220FM
—
Conforms

1.8 g

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for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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