HIT 2SB1389 Datasheet
Application
Low frequency power amplifier
Outline
TO-220FM
2SB1389
Silicon PNP Triple Diffused
2
1
1. Base
2. Collector
1
2
3
3. Emitter
4.5 kΩ
(Typ)
500 Ω
(Typ)
3
I
D
2SB1389
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current I
Collector power dissipation P
CBO
CEO
EBO
C
C(peak)
C
1
P
*
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
C to E diode forward current ID*
1
Note: 1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current I
DC current transfer ratio h
Collector to emitter saturation V
voltage V
Base to emitter saturation V
voltage V
C to E diode forward voltage V
Note: 1. Pulse test.
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
I
CEO
FE
CE(sat)1
CE(sat)2
BE(sat)1
BE(sat)2
D
–60 — — V IC = –0.1 mA, IE = 0
–60 — — V IC = –25 mA, RBE = ∞
–7 — — V IE = –50 mA, IC = 0
— — –10 µAVCB = –50 V, IE = 0
— — –10 VCE = –50 V, RBE = ∞
1000 — 20000 VCE = –3 V, IC = –2 A*
— — –1.5 V IC = –2 A, IB = –4 mA*
— — –3.0 IC = –4 A, IB = –40 mA*
— — –2.0 V IC = –2 A, IB = –4 mA*
— — –3.5 IC = –4 A, IB = –40 mA*
— — 3.0 V ID = 4 A*
–60 V
–60 V
–7 V
–4 A
–8 A
2W
25
4A
1
1
1
1
1
1
See switching characteristic curve of 2SB1101.
2
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