HIT 2SB1059 Datasheet
Silicon PNP Epitaxial
Application
• Low frequency power amplifier
• Complementary pair with 2SD1490
Outline
TO-92 (1)
2SB1059
1. Emitter
2. Collector
3. Base
3
2
1
2SB1059
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff current I
Emitter cutoff current I
CBO
EBO
DC current transfer ratio hFE*
Collector to emitter saturation
V
CE(sat)
voltage
Gain bandwidth product f
T
Collector output capacitance Cob — 35 — pF VCB = –10 V, IE = 0, f = 1 MHz
Note: 1. The 2SB1059 is grouped by hFE as follows.
BC
100 to 200 160 to 320
–70 — — V IC = –10 µA, IE = 0
–50 — — V IC = –1 mA, RBE = ∞
–6 — — V IE = –10 µA, IC = 0
——–1µAV
— — –0.2 µAV
1
100 — 320 VCE = –2 V, IC = –0.1 A
— — –0.6 V IC = –1 A, IB = –0.1 A
— 65 — MHz VCE = –2 V, IC = –10 mA
–70 V
–50 V
–6 V
–1 A
0.75 W
= –55 V, IE = 0
CB
= –6 V, IC = 0
EB
See characteristic curves of 2SB740.
2
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