HIT 2SB1002 Datasheet
Silicon PNP Epitaxial
Application
• Low frequency power amplifier
• Complementary pair with 2SD1368
Outline
UPAK
2SB1002
1
2
3
4
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
2SB1002
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current i
Collector power dissipation PC*
CBO
CEO
EBO
C
C(peak)
1
*
2
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%
2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff current I
Emitter cutoff current I
CBO
EBO
DC current transfer ratio hFE*
Collector to emitter saturation
V
CE(sat)
voltage
Base to emitter saturation
V
BE(sat)
voltage
Gain bandwidth product f
T
Collector output capacitance Cob — 35 — pF VCB = –10 V, IE = 0,
Note: 1. The 2SB1002 is grouped by hFE as follows.
Mark CH CJ
h
FE
100 to 200 160 to 320
–70 — — V IC = –10 µA, IE = 0
–50 — — V IC = –1 mA, RBE = ∞
–6——V I
— — –0.1 µAVCB = –50 V, IE = 0
— — –0.1 µAVEB = –4 V, IC = 0
1
100 — 320 VCE = –2 V, IC = –0.1 A
— — –0.6 V IC = –1 A,
— — –1.2 V IC = –1 A,
— 150 — MHz VCE = –2 V,
–70 V
–50 V
–6 V
–1 A
–1.5 A
1W
= –10 µA, IC = 0
E
I
= –0.1 A (Pulse test)
B
I
= –0.1 A (Pulse test)
B
I
= –10 mA (Pulse test)
C
f = 1 MHz
2
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