HIT 2SB1001 Datasheet
Silicon PNP Epitaxial
Application
• Low frequency power amplifier
• Complementary pair with 2SD1367
Outline
UPAK
2SB1001
1
2
3
4
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
2SB1001
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current i
Collector power dissipation PC*
CBO
CEO
EBO
C
C(peak)
1
*
2
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%
2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff current I
Emitter cutoff current I
CBO
EBO
DC current transfer ratio hFE*
Collector to emitter saturation
V
CE(sat)
voltage
Base to emitter saturation
V
BE(sat)
voltage
Gain bandwidth product f
T
Collector output capacitance Cob — 50 — pF VCB = –10 V, IE = 0,
Note: 1. The 2SB1001 is grouped by hFE as follows.
Mark BH BJ
h
FE
100 to 200 160 to 320
–20 — — V IC = –10 µA, IE = 0
–16 — — V IC = –1 mA, RBE = ∞
–6——V I
— — –0.1 µAVCB = –16 V, IE = 0
— — –0.1 µAVEB = –5 V, IC = 0
1
100 — 320 VCE = –2 V,
— –0.15 –0.3 V IC = –1 A,
— –1.0 –1.2 V IC = –1 A,
— 150 — MHz VCE = –2 V,
–20 V
–16 V
–6 V
–2 A
–3 A
1W
= –10 µA, IC = 0
E
I
= –0.1 A (Pulse test)
C
I
= –0.1 A (Pulse test)
B
I
= –0.1 A (Pulse test)
B
I
= –10 mA
C
f = 1 MHz
2
Loading...