HIT 2SA836 Datasheet
Application
Low frequency low noise amplifier
Outline
TO-92 (1)
2SA836
Silicon PNP Epitaxial
1. Emitter
2. Collector
3. Base
3
2
1
2SA836
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Emitter current I
Collector power dissipation P
CBO
CEO
EBO
C
E
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff current I
Emitter cutoff current I
CBO
EBO
DC current transfer ratio hFE*
Collector to emitter saturation
V
CE(sat)
voltage
Base to emitter voltage V
Gain bandwidth product f
BE
T
Collector output capacitance Cob — 2.0 — pF V
Noise figuer NF — 1 5 dB VCE = –6 V, f = 10 Hz
Note: 1. The 2SA836 is grouped by hFE as follows.
CD
160 to 320 250 to 500
–55 — — V IC = –10 µA, IE = 0
–55 — — V IC = –1 mA, RBE = ∞
–5 — — V IE = –10 µA, IC = 0
— — –100 nA V
— — –50 nA V
1
160 — 500 V
— –0.1 –0.5 V IC = –10 mA, IB = –1 mA
— –0.66 –0.75 V VCE = –12 V, IC = –2 mA
— 200 — MHz V
— 0.5 1 dB IC = –0.1mA,
–55 V
–55 V
–5 V
–100 mA
100 mA
200 mW
= –18 V, IE = 0
CB
= –2 V, IC = 0
EB
= –12 V, IC = –2 mA
CE
= –12 V, IE = –2 mA
CE
= –10 V, IE = 0, f = 1MHz
CB
R
= 10 kΩ
g
f = 1 kHz
2
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