HIT 2SA778A, 2SA778 Datasheet

2SA778(K), 2SA778A(K)
Application
High voltage medium speed switching
Outline
Silicon PNP Epitaxial
1. Emitter
2. Collector
3. Base
3
2
1
2SA778(K), 2SA778A(K)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol 2SA778(K) 2SA778A(K) Unit
Collector to base voltage V Collector to emitter voltage V Emitter to base voltage V Collector current I Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 150 °C Storage temperature Tstg –55 to +150 –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
2SA778(K) 2SA778A(K)
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Collector cutoff current I
Emitter cutoff current I DC current transfer ratio h
Collector to emitter saturation voltage
Base to emitter saturation voltage
Collector output capacitance
Gain bandwidth product f
Turn on time t Turn off time t
Storage time t
V
(BR)CBO
V
(BR)CER
CBO
–150 — –180 — V IC = –50 µA, IE = 0
–150 — –180 — V IC = –50 µA,
–1.0 µAVCB = –100 V, IE = 0 — –1.0 µAVCB = –150 V, IE = 0 — –1.0 –1.0 µAVEB = –5 V, IC = 0 30 100 40 100 200 VCE = –3 V,
–0.3 –1.0 –0.3 –1.0 V IC = –15 mA,
–0.77 –1.0 –0.77 –1.0 V IC = –15 mA,
V
V
EBO
FE
CE(sat)
BE(sat)
Cob 10 10 pF VCB = –10 V, IE = 0,
T
on
off
stg
50 50 MHz VCE = –3 V,
135 135 ns VCC = –10.3 V — 1.7 1.7 µsIC = 10 IB1 = –10
1.0 1.0 µsVCC = –10 V,
–150 –180 V –150 –180 V –5 –5 V –50 –50 mA 200 200 mW
R
= 30 k
BE
I
= –15 mA
E
I
= –1 mA
B
I
= –1 mA
B
f = 1 MHz
I
= –15 mA
C
I
= –10 mA
B2
I
=–17 mA
C
I
= –1mA,
B1
I
= –12 mA
B2
2
2SA778(K), 2SA778A(K)
t
on
P.G. tr, t
15ns
f
PW 5µs
duty ratio 10%
Input
–13 V
Output
Switching Time Test Circuit
, t
Test Circuit
off
6 k
D.U.T.
6 k
0.002 0.002
+–+–
6 V –10.3 V
505050
Response Waveform
0
0
10%
10%
t
d
90%
t
on
CRT
1 k
UnitR :
C : µF
90%
t
stg
t
off
`
10%
90%
P.G.
, t
5ns
t
r
f
PW 5µs duty ratio = 50%
Switching Time Test Circuit
Test Circuit
t
stg
0.1
2.4 k
D.U.T
0.002 0.002
50
–++–
Response Waveform
+7 V
Input
0
10%
0
Output
t
stg
510
5050
10%
0.1 CRT
16
–10 V–3 V
UnitR :
C : µF
3
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