HIT 2SA743A, 2SA743 Datasheet
2SA743, 2SA743A
Silicon PNP Epitaxial
Application
Low frequency power amplifier complementary pair with 2SC1212 and 2SC1212A
Outline
TO-126 MOD
1. Emitter
2. Collector
1
2
3
3. Base
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item Symbol 2SA743 2SA743A Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C
Note: 1. Value at TC = 25°C.
C
PC*
CBO
CEO
EBO
C
1
–50 –80 V
–50 –80 V
–4 –4 V
–1 –1 A
0.75 0.75 W
88
2SA743, 2SA743A
Electrical Characteristics (Ta = 25°C)
2SA743 2SA743A
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current I
DC current tarnsfer ratio hFE*
Base to emitter voltage V
Collector to emitter
saturation voltage
Gain bandwidth product f
Note: 1. The 2SA743 and 2SA743A is grouped by hFE as follows.
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CER
I
CER
h
FE
BE
V
CE(sat)
T
–50 — — –80 — — V IC = –1 mA, IE = 0
–50 — — –80 — — V IC = –10 mA, RBE = ∞
–4 — — –4 — — V IE = –1 mA, IC = 0
— — –20 — — — µAVCE = –50 V, RBE = 1
kΩ
— — — — — –20 VCE = –80 V, RBE = 1
kΩ
1
60 120 200 60 120 200 VCE = –4 V, IC = –50
mA
20 — — 20 — — VCE = –4 V, IC = –1 A
(pulse)
— –0.65 –1.0 — –0.65 1.0 V VCE = –4 V, IC = –50
mA
— –0.75 –1.5 — –0.75 –1.5 V IC = –1 A, IB = –0.1 A
— 120 — — 120 — MHz VCE = –4 V, IC = –30
mA
BC
60 to 120 100 to 200
2
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