HIT 2SA673A, 2SA673 Datasheet
2SA673, 2SA673A
Silicon PNP Epitaxial
Application
• Low frequency amplifier
• Complementary pair with 2SC1213 and 2SC1213A
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SA673, 2SA673A
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol 2SA673 2SA673A Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
2SA673 2SA673A
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current I
Collector to emitter
saturation voltage
DC current trnsfer ratio hFE*
DC current trnsfer ratio h
Base to emitter voltage V
Notes: 1. The 2SA673 and 2SA673A are grouped by hFE as follows.
2. Pulse test
BCD
60 to 120 100 to 200 160 to 320
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
V
CE(sat)
FE
BE
–35 — — –50 — — V IC = –10 µA, IE = 0
–35 — — –50 — — V IC = –1 mA, RBE = ∞
–4 — — –4 — — V IE = –10 µA, IC = 0
— — –0.5 — — –0.5 µAVCB = –20 V, IE = 0
— –0.2 –0.6 — –0.2 –0.6 V IC = –150 mA,
1
60 — 320 60 — 320 VCE = –3 V,
10 — — 10 — — VCE = –3 V,
— –0.64 — — –0.64 — V VCE = –3 V,
–35 –50 V
–35 –50 V
–4 –4 V
–500 –500 mA
400 400 mW
I
= –15 mA*
B
I
= –10 mA
C
I
= –500 mA*
C
I
=–10 mA
C
2
2
2
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