HIT 2SA1810 Datasheet
Silicon PNP Epitaxial
Application
High frequency amplifier
Features
• Excellent high frequency characteristics
fT = 300 MHz typ
• High voltage and low output capacitance
V
= –200 V, Cob = 5.0 pF typ
CEO
• Suitable for wide band video amplifier
2SA1810
Outline
TO-126 MOD
1. Emitter
2. Collector
1
2
3
3. Base
2SA1810
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current I
Collector power dissipation P
CBO
CEO
EBO
C
C(peak)
C
PC*
1
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff current I
CBO
DC current transfer ratio hFE*
Base to emitter voltage V
Collector to emitter saturation
V
BE
CE(sat)
voltage
Gain bandwidth product f
T
Collector output capacitance Cob — 5.0 — pF VCB = –30 V, IE = 0, f = 1 MHz
Note: 1. The 2SA1810 is grouped by hFE as follows.
–200 — — V IC = –10 µA, IE = 0
–200 — — V IC = –1 mA, RBE = ∞
–5 — — V IE = –10 µA, IC = 0
— — –10 µAVCB = –160 V, IE = 0
1
60 — 200 VCE = –5 V, IC = –10 mA
— — –1.0 V VCE = –5 V, IC = –30 mA
— — –1.0 V IC = –30 mA, IB = –3 mA
200 300 — MHz VCE = –20 V, IC = –30 mA
–200 V
–200 V
–5 V
–0.2 A
–0.5 A
1.25 W
10
BC
60 to 120 100 to 200
2
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