HIT 2SA1566 Datasheet

2SA1566

Silicon PNP Epitaxial

Application

Low frequency amplifier

Outline

MPAK

3

		1	Emitter
		1.
	2	2.	Base
		3.	Collector

2SA1566

Absolute Maximum Ratings (Ta = 25°C)

Item	Symbol	Ratings	Unit
Collector to base voltage	VCBO	–120	V
Collector to emitter voltage	VCEO	–120	V
Emitter to base voltage	VEBO	–5	V
Collector current	IC	–100	mA
Collector power dissipation	PC	150	mW
Junction temperature	Tj	150	°C
Storage temperature	Tstg	–55 to +150	°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

V(BR)CBO

–120

—

—

V

I

C = –10 A, IE = 0

voltage

Collector to emitter breakdown

V(BR)CEO

–120

—

—

V

I

C = –1 mA, RBE = ∞

voltage

Emitter to base breakdown

V(BR)EBO

–5

—

—

V

I

E = –10 A, IC = 0

voltage

Collector cutoff current

ICBO

—

—

–0.1

A

VCB = –70 V, IE = 0

Emitter cutoff current

IEBO

—

—

–0.1

A

VEB = –2 V, IC = 0

DC current transfer ratio

h *1

250

—

800

V

CE

= –12 V, I

= –2 mA*2

FE

C

Collector to emitter saturation

V

CE(sat)

—

—

–0.15

V

I

C

= –10 mA, I

B

= –1 mA*2

voltage

Base to emitter voltage

V

BE(sat)

—

—

–1.0

V

I

C

= –10 mA, I

B

= –1 mA*2

Notes: 1. The 2SA1566 is grouped by hFE as follows.

2.

Pulse test

Grade

D

E

Mark

JID

JIE

hFE

250 to 500

400 to 800

2