HIT 2SA1566 Datasheet

Application

Low frequency amplifier

Outline

MPAK

2SA1566

Silicon PNP Epitaxial

3

1

2

1. Emitter

2. Base

3. Collector

2SA1566

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P

CBO

CEO

EBO

C

C

Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Collector to base breakdown

V

(BR)CBO

voltage
Collector to emitter breakdown

V

(BR)CEO

voltage
Emitter to base breakdown

V

(BR)EBO

voltage
Collector cutoff current I
Emitter cutoff current I

CBO

EBO

DC current transfer ratio hFE*
Collector to emitter saturation

V

CE(sat)

voltage
Base to emitter voltage V

BE(sat)

Notes: 1. The 2SA1566 is grouped by hFE as follows.

2. Pulse test

Grade D E

Mark JID JIE
h

FE

250 to 500 400 to 800

–120 — — V IC = –10 µA, IE = 0

–120 — — V IC = –1 mA, RBE = ∞

–5 — — V IE = –10 µA, IC = 0

— — –0.1 µAV
— — –0.1 µAV

1

250 — 800 V
— — –0.15 V IC = –10 mA, IB = –1 mA*

— — –1.0 V IC = –10 mA, IB = –1 mA*

–120 V
–120 V
–5 V
–100 mA
150 mW

= –70 V, IE = 0

CB

= –2 V, IC = 0

EB

= –12 V, IC = –2 mA*

CE

2

2

2

2

2SA1566

Maximum Collector Dissipation Curve

150

100

50

Collector power dissipation Pc (mW)

0 50 100 150

Ambient Temperature Ta (°C)

Typical Transfer Characteristics

–100

VCE = –6 V
Pulse

Ta = 75°C

(mA)

C

–10

Typical Output Characteristics

–10

–8

(mA)

C

–6

Pulse

–20

–18

–16

–14
–12

–10

–4

–2

Collector Current I

0 –4 –8 –12 –16 –20

Collector to Emitter Voltage V

DC Current Transfer Ratio vs.

Collector Current

1,000

Ta = 75°C

FE

300

25

–25

–8
–6
–4

–2 µA

CE

IB = 0

(V)

–1.0

25

Collector Current I

–0.1

0 –0.2 –0.4 –0.6 –0.8 –1.0

Base to Emitter Voltage V

–25

BE

(V)

100

30

DC current transfer ratio h

VCE = –12 V
Pulse

10

–1 –3 –10 –30 –100

Collector Current I

C

(mA)

3

2SA1566

Collector to Emitter Saturation Voltage vs.

Collector Current

–1.0

IC = 10 I

B

Pulse

–0.3

(V)

–0.1

(sat)
CE

V

Ta = 75°C

–0.03

Collector to emitter saturation voltage

–0.01

–1 –3 –10 –30 –100

Collector Current I

100

(pF)

ob

30

1,000

(MHz)

T

–25

25

Gain bandwidth product f

(mA)

C

Collector Output Capacitance vs.

Collector to Base Voltage

f = 1 MHz

= 0

I

E

Gain Bandwidth Product vs.

Collector Current

VCE = –6 V
Pulse

500

200

100

50

20

10

–0.5 –1.0 –2 –5 –10 –20 –50

Collector Current I

(mA)

C

10

3

Collector output capacitance C

1

–1 –3 –10 –30 –100

Collector to Base Voltage VCB (V)

4

Unit: mm

3 – 0.4

+ 0.10
– 0.05

0.95

1.9 ± 0.2

2.95 ± 0.2

0.95

0.65

1.5 ± 0.15

0.65

0.3

+ 0.2

+ 0.2

– 0.6

2.8

– 0.1

1.1

+ 0.10

0.16

– 0.06

0 – 0.1

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

MPAK
—
Conforms

0.011 g

Cautions

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copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

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products.

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