HIT 2SA1485 Datasheet

Application
Low frequency amplifier
Outline
2SA1485
Silicon PNP Epitaxial
1. Emitter
2. Collector
3. Base
3
2
1
2SA1485
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V Collector to emitter voltage V Emitter to base voltage V Collector current I Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current I DC current transfer ratio h Collector to emitter saturation
voltage Base to emitter voltage V
Note: 1. Pulse test
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CEO
FE
V
CE(sat)
BE
–200 V IC = –10 µA, IE = 0
–200 V IC = –0.5 mA, RBE =
–5 V IE = –10 µA, IC = 0
–500 µAVCE = –200 V, RBE = 100 250 V — –0.5 V IC = –30 mA, IB = –3 mA*
–1.0 V VCE = –12 V, IC = –2 mA*
–200 V –200 V –5 V –100 mA 200 mW
= –12 V, IC = –2 mA*
CE
1
1
1
2
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