HIT 2SA1468 Datasheet
Application
High voltage amplifier
Outline
MPAK
2SA1468
Silicon PNP Epitaxial
3
1
2
1. Emitter
2. Base
3. Collector
2SA1468
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter to base breakdown
V
(BR)EBO
voltage
DC current transfer ratio hFE*
Collector to emitter saturation
V
CE(sat)
voltage
Base to emitter voltage V
Gain bandwidth product f
BE
T
Collector output capacitance Cob — 3.5 — pF VCB = –10 V, IE = 0, f = 1 MHz
Notes: 1. The 2SA1468 is grouped by hFE as follows.
2. Pulse test
Grade B C
Mark INB INC
h
FE
100 to 200 160 to 320
–180 — — V IC = –10 µA, IE = 0
–180 — — V IC = –0.5 mA, RBE = ∞
–5 — — V IE = –10 µA, IC = 0
1
100 — 320 V
— — –0.5 V IC = –30 mA, IB = –3 mA*
— — –1.0 V VCE = –12 V, IC = –2 mA
— 200 — MHz VCE = –12 V, IC = –10 mA
–180 V
–180 V
–5 V
–100 mA
150 mW
= –12 V, IC = –2 mA*
CE
2
2
2
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