HIT 2SA1390 Datasheet
Application
Low frequency amplifier
Outline
SPAK
2SA1390
Silicon PNP Epitaxial
1
2
3
1. Emitter
2. Collector
3. Base
2SA1390
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff current I
Collector to emitter saturation
V
CBO
CE(sat)
voltage
DC current transfer ratio h
DC current transfer ratio h
Base to emitter voltage V
FE1
FE2
BE
Notes: 1. The 2SA1390 is grouped by h
2. Pulse test
BCD
60 to 120 100 to 200 160 to 320
–35 — — V IC = –10 µA, IE = 0
–35 — — V IC = –1 mA, RBE = ∞
–4 — — V IE = –10 µA, IC = 0
— — –0.5 µAV
— –0.2 –0.6 V IC = –150 mA, IB = –15 mA*
1
*
60 — 320 V
10 — — V
— –0.64 — V VCE = –3 V, IC = –10 mA
as follows.
FE1
–35 V
–35 V
–4 V
–500 mA
300 mW
= –20 V, IE = 0
CB
= –3 V, IC = –10 mA
CE
= –3 V, IC = –500 mA*
CE
2
2
See characteristic curves of 2SA673.
2
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