HIT 2SA1350 Datasheet
Silicon PNP Epitaxial
Application
• Low frequency low noise amplifier
• HF amplefier
Outline
SPAK
2SA1350
1
2
3
1. Emitter
2. Collector
3. Base
2SA1350
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff current I
Emitter cutoff current I
CBO
EBO
DC current transfer ratio hFE*
Base to emitter voltage V
Collector to emitter saturation
V
BE
CE(sat)
voltage
Gain bandwidth product f
T
Collector output capacitance Cob — — 4.5 pF VCB = –10 V, IE = 0, f = 1 MHz
Noise figure NF — 1.0 5.0 dB VCE = –6 V, IC = –0.1 mA
Note: 1. The 2SA1350 is grouped by hFE as follows.
BCD
100 to 200 160 to 320 250 to 500
–40 — — V IC = –10 µA, IE = 0
–30 — — V IC = –1 mA, RBE = ∞
–5 — — V IE = –10 µA, IC = 0
— — –0.5 µAV
— — –0.5 µAV
1
100 — 500 VCE = –12 V, IC = –2 mA
— — –0.75 V VCE = –12 V, IC = –2 mA
— — –0.2 V IC = –10 mA, IB = –1 mA
— 200 — MHz VCE = –12 V, IC = –2 mA
–40 V
–30 V
–5 V
–100 mA
300 mW
= –18 V, IE = 0
CB
= –2 V, IC = 0
EB
R
= 1 kΩ, f = 1 kHz
g
See characteristic curves of 2SA1031.
2
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