HIT 2SA1193 Datasheet
Application
High gain amplifier
Outline
TO-92MOD
2SA1193(K)
Silicon PNP Epitaxial, Darlington
2
3
1. Emitter
2. Collector
3. Base
1
3
2
1
2SA1193(K)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current i
Collector power dissipation P
CBO
CEO
EBO
C
C(peak)
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to emitter breakdown
voltage
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio h
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Turn on time t
Turn off time t
Note: 1. Pulse test
V
(BR)CEO
CBO
EBO
FE
V
CE(sat)
V
BE(sat)
on
off
–60 — — V IC = –1 mA, RBE = ∞
— — –1.0 µAV
— — –1.0 µAV
2000 — — V
— — –1.5 V IC = –250 mA, IB = –0.5 mA*
— — –2.0 V
— 0.3 — µsI
— 0.9 — µsIB1 = –IB2 = –0.5 mA
–60 V
–60 V
–7 V
–0.5 A
–1.0 A
0.9 W
= –60 V, IE = 0
CB
= –7 V, IC = 0
EB
= –3 V, IC = –250 mA*
CE
= –250 mA
C
1
1
2
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