HIT 2SA1191, 2SA1190 Datasheet
2SA1190, 2SA1191
Silicon PNP Epitaxial
Application
• Low frequency low noise amplifier
• Complementary pair with 2SC2855 and 2SC2856
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SA1190, 2SA1191
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol 2SA1190 2SA1191 Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Emitter current I
Collector power dissipation P
CBO
CEO
EBO
C
E
C
Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C
–90 –120 V
–90 –120 V
–5 –5 V
–100 –100 mA
100 100 mA
400 400 mW
2
2SA1190, 2SA1191
Electrical Characteristics (Ta = 25°C)
2SA1190 2SA1191
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current I
Emitter cutoff current I
DC current trnsfer ratio hFE*
Collector to emitter
saturation voltage
Base to emitter
saturation voltage
Gain bandwidth product f
Collector output
capacitance
Noise figure NF — 0.15 1.5 — 0.15 1.5 dB VCE = –6 V,
Noise voltage reffered
to input
Notes: 1. The 2SA1190 and 2SA1191 are grouped by hFE as follows.
2. Pulse test
DE
250 to 500 400 to 800
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
V
CE(sat)
V
BE(sat)
T
–90 — — –120 — — V IC = –10 µA, IE = 0
–90 — — –120 — — V IC = –1 mA, RBE = ∞
–5 — — –5 — — V IE = –10 µA, IC = 0
— — –0.1 — — –0.1 µAVCB = –70 V, IE = 0
— — –0.1 — — –0.1 µAVEB = –2 V, IC = 0
1
250 — 800 250 — 800 VCE = –12 V,
I
= –2 mA*
C
— –0.05 –0.15 — –0.05 –0.15 V IC = –10 mA,
I
= –1 mA*
B
— –0.7 –1.0 — –0.7 –1.0 V
— 130 — — 130 — MHz VCE = –6 V,
I
= –10 mA
C
2
2
Cob — 3.2 — — 3.2 — pF VCB = –10 V, IE = 0,
f = 1 MHz
I
= –0.1 mA,
C
R
= 10 kΩ
g
f = 1 kHz
— 0.2 2.0 — 0.2 2.0 dB VCE = –6 V,
I
= –0.1 mA,
C
R
= 10 kΩ
g
f = 10 Hz
e
n
— 0.7 — — 0.7 — nV/
√Hz
VCB = –6 V,
I
= –10 mA,
C
Rg = 0, f = 1 kHz
3
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