HIT 2SA1189, 2SA1188 Datasheet
2SA1188, 2SA1189
Silicon PNP Epitaxial
Application
• Low frequency amplifier
• Complementary pair with 2SC2853 and 2SC2854
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SA1188, 2SA1189
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol 2SA1188 2SA1189 Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Emitter current I
Collector power dissipation P
CBO
CEO
EBO
C
E
C
Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
2SA1188 2SA1189
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current I
Emitter cutoff current I
DC current trnsfer ratio hFE*
Collector to emitter
saturation voltage
Base to emitter
saturation voltage
Gain bandwidth product f
Collector output
capacitance
Notes: 1. The 2SA1188 and 2SA1189 are grouped by hFE as follows.
2. Pulse test
DE
250 to 500 400 to 800
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
V
CE(sat)
V
BE(sat)
T
–90 — — –120 — — V IC = –10 µA, IE = 0
–90 — — –120 — — V IC = –1 mA, RBE = ∞
–5 — — –5 — — V IE = –10 µA, IC = 0
— — –0.1 — — –0.1 µAVCB = –70 V, IE = 0
— — –0.1 — — –0.1 µAVEB = –2 V, IC = 0
1
250 — 800 250 — 800 VCE = –12 V,
— –0.05 –0.15 — –0.05 –0.15 V IC = –10 mA,
— –0.7 –1.0 — –0.7 –1.0 V
— 130 — — 130 — MHz VCE = –6 V,
Cob — 3.2 — — 3.2 — pF VCB = –10 V, IE = 0,
–90 –120 V
–90 –120 V
–5 –5 V
–100 –100 mA
100 100 mA
400 400 mW
I
= –2 mA*
C
I
= –1 mA*
B
I
= –10 mA
C
2
2
f = 1 MHz
See characteristic curves of 2SA1190 and 2SA1191.
2
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