HIT 2SA1121 Datasheet
Silicon PNP Epitaxial
Application
• Low frequency amplifier
• Complementary pair with 2SC2618
Outline
MPAK
2SA1121
3
1
2
1. Emitter
2. Base
3. Collector
2SA1121
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff current I
Collector to emitter saturation
CBO
V
CE(sat)
voltage
DC current transfer ratio hFE*
h
FE
Base to emitter voltage V
BE
Note: 1. The 2SA1121 is grouped by hFE as follows.
Grade B C D
Mark SB SC SD
h
FE
60 to 120 100 to 200 160 to 320
–35 — — V IC = –10 µA, IE = 0
–35 — — V IC = –1 mA, RBE = ∞
–4 — — V IE = –10 µA, IC = 0
— — –0.5 µAV
— –0.2 –0.6 V IC = –150 mA, IB = –15 mA
1
60 — 320 V
10 — — V
— –0.64 — V VCE = –3 V, IC = –10 mA
–35 V
–35 V
–4 V
–500 mA
150 mW
= –20 V, IE = 0
CB
= –3 V, IC = –10 mA
CE
= –3 V, IC = –500 mA
CE
(Pulse test)
See characteristic curves of 2SA673.
2
Loading...