HIT 2SA1085, 2SA1084, 2SA1083 Datasheet
2SA1083, 2SA1084, 2SA1085
Silicon PNP Epitaxial
Application
• Low frequency low noise amplifier
• Complementary pair with 2SC2545, 2SC2546 and 2SC2547
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SA1083, 2SA1084, 2SA1085
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol 2SA1083 2SA1084 2SA1085 Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Emitter current I
Collector power dissipation P
CBO
CEO
EBO
C
E
C
Junction temperature Tj 150 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 –55 to +150 °C
–60 –90 –120 V
–60 –90 –120 V
–5 –5 –5 V
–100 –100 –100 mA
100 100 100 mA
400 400 400 mW
2
2SA1083, 2SA1084, 2SA1085
Electrical Characteristics (Ta = 25°C)
2SA1083 2SA1084 2SA1085
Item Symbol Min Typ Max Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio hFE*
Collector to emitter
saturation voltage
Base to emitter voltage V
Gain bandwidth product f
Collector output
capacitance
Noise voltage reffered
to input
Note: 1. The 2SA1083, 2SA1084 and 2SA1085 are grouped by hFE as follows.
DE
250 to 500 400 to 800
V
V
–60 — — –90 — — –120 — — V IC = –10 µA, IE = 0
(BR)CBO
–60 — — –90 — — –120 — — V IC = –1 mA,
(BR)CEO
RBE = ∞
V
CBO
EBO
–5 — — –5 — — –5 — — V IE = –10 µA, IC = 0
(BR)EBO
— — –0.1 — — –0.1 — — –0.1 µAVCB = –50 V, IE = 0
— — –0.1 — — –0.1 — — –0.1 µAVEB = –2 V, IC = 0
1
250 — 800 250 — 800 250 — 800 VCE = –12 V,
IC = –2 mA
V
— — –0.2 — — –0.2 — — –0.2 V IC = –10 mA,
CE(sat)
IB = –1 mA
— –0.6 — — –0.6 — — –0.6 — V VCE = –12 V,
BE
IC = –2 mA
T
—90— —90— —90— MHzVCE = –12 V,
IC = –2 mA
Cob — 3.5 — — 3.5 — — 3.5 — pF VCB = –10 V, IE = 0,
f = 1 MHz
e
— 0.5 — — 0.5 — — 0.5 — nV/
n
√Hz
VCE = –6V,
IC = –10 mA,
f = 1 kHz,
Rg = 0, ∆f = 1Hz
3
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