HIT 2SA1032 Datasheet
2SA1031, 2SA1032
Silicon PNP Epitaxial
Application
• Low frequency low noise amplifier
• Complementary pair with 2SC458 (LG) and 2SC2310
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SA1031, 2SA1032
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol 2SA1031 2SA1032 Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Emitter current I
Collector power dissipation P
CBO
CEO
EBO
C
E
C
Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C
–30 –55 V
–30 –50 V
–5 –5 V
–100 –100 mA
100 100 mA
300 300 mW
2
2SA1031, 2SA1032
Electrical Characteristics (Ta = 25°C)
2SA1031 2SA1032
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current I
Emitter cutoff current I
DC current trnsfer ratio hFE*
Base to emitter voltage V
Collector to emitter
saturation voltage
Gain bandwidth product f
Collector output
capacitance
Noise figure NF — — 5 — — 5 dB VCE = –6 V,
Note: 1. The 2SA1031 and 2SA1032 are grouped by hFE as follows.
BCD
2SA1031 100 to 200 160 to 320 250 to 500
2SA1032 100 to 200 160 to 320 —
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
BE
V
CE(sat)
T
–30 — — –55 — — V IC = –10 µA, IE = 0
–30 — — –50 — — V IC = –1 mA, RBE = ∞
–5 — — –5 — — V IE = –10 µA, IC = 0
— — –0.5 — — –0.5 µAVCB = –18 V, IE = 0
— — –0.5 — — –0.5 µAVEB = –2 V, IC = 0
1
100 — 500 100 — 320 VCE = –12 V,
I
= –2 mA
C
— — –0.8 — — –0.8 V VCE = –12 V,
I
= –2 mA
C
— — –0.2 — — –0.2 V IC = –10 mA,
I
= –1 mA
B
200 280 — 200 280 — MHz VCE = –12 V,
I
= –2 mA
C
Cob — 3.3 4.0 — 3.3 4.0 pF VCB = –10 V, IE = 0,
f = 1 MHz
I
= –0.1 mA,
C
R
= 500 Ω,
g
f = 120 Hz
3
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