HIT 2SA1030, 2SA1029 Datasheet
2SA1029, 2SA1030
Silicon PNP Epitaxial
Application
• Low frequency amplifier
• Complementary pair with 2SC458 and 2SC2308
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SA1029, 2SA1030
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol 2SA1029 2SA1030 Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Emitter current I
Collector power dissipation P
CBO
CEO
EBO
C
E
C
Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
2SA1029 2SA1030
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current I
Emitter cutoff current I
DC current trnsfer ratio hFE*
Base to emitter voltage V
Collector to emitter
saturation voltage
Gain bandwidth product f
Collector output
capacitance
Note: 1. The 2SA1029 and 2SA1030 are grouped by hFE as follows.
BCD
2SA1029 100 to 200 160 to 320 250 to 500
2SA1030 100 to 200 160 to 320 —
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
BE
V
CE(sat)
T
–30 — — –55 — — V IC = –10 µA, IE = 0
–30 — — –50 — — V IC = –1 mA, RBE = ∞
–5 — — –5 — — V IE = –10 µA, IC = 0
— — –0.5 — — –0.5 µAVCB = –18 V, IE = 0
— — –0.5 — — –0.5 µAVEB = –2 V, IC = 0
1
100 — 500 100 — 320 VCE = –12 V,
— — –0.8 — — –0.8 V VCE = –12 V,
— — –0.2 — — –0.2 V IC = –10 mA,
200 280 — 200 280 — MHz VCB = –12 V,
Cob — 3.3 4.0 — 3.3 4.0 pF VCB = –10 V, IE = 0,
–30 –55 V
–30 –50 V
–5 –5 V
–100 –100 mA
100 100 mA
300 300 mW
I
= –2 mA
C
I
= –2 mA
C
I
= –1 mA
B
I
= –2 mA
C
f = 1 MHz
See characteristic curves of 2SA1031 and 2SA1032.
2
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