harman kardon HD 74 HCT 1 G 66 Service Manual

Page 1
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas T echnology Corp. Customer Support Dept. April 1, 2003
Page 2
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble ma y occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap .
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party.
2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no re sponsibility for any damage, liability or other loss resulting from the information contained herein.
5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.
Page 3
HD74HCT1G66
Analog Switch
ADE-205-308E (Z)
6th. Edition
Feb. 2003
Description
The HD74HCT1G66 is high speed CMOS analog switch using silicon gate CMOS process. With CMOS low power dissipation, it provides high speed. The device has low ON resistance for good transfer characteristics and can take wide range of input voltage.
Features
The basic gate function is lined up as hitachi uni logic series.
Supplied on emboss taping for high speed automatic mounting.
Control input is TTL compatible input level.
Supply voltage range : 4.5 to 5.5 V Operating temperature range : –40 to +85°C
|I
Ordering Information
Part Name Package Type Package Code Package
HD74HCT1G66CME CMPAK-5 pin CMPAK-5V CM E (3,000 pcs/reel)
| = IOL = 2 mA (min)
OH
Abbreviation
Taping Abbreviation (Quantity)
Page 4
HD74HCT1G66
Outline and Article Indication
HD74HCT1G66
Index band
Marking
F 9
CMPAK-5
Function Table
Control Switch
L OFF
H ON
H : High level L : Low level GND • V GND • V
IN
OUT
• V
CC
• VCC
= Control code ( or blank)
Pin Arrangement
Rev.5, Feb. 2003, page 2 of 2
IN/OUT
OUT/IN
GND
1
2
3
(Top view)
54V
CC
Control
Page 5
HD74HCT1G66
Absolute Maximum Ratings
Item Symbol Ratings Unit Test Conditions
Supply voltage range V
Input voltage range *1 V
Output voltage range *
1, 2
V
Input clamp current IIK ±20 mA VI < 0 or VI > VCC
Output clamp current IOK ±20 mA VO < 0 or VO >VCC
Continuous output current IO ±25 mA VO = 0 to VCC
Continuous current through V
or GND
CC
Maximum power dissipation at Ta = 25°C (in still air) *
3
Storage temperature Tstg –65 to 150 °C
Notes: The absolute maximum ratings are values which must not individually be exceeded, and
furthermore, no two of which may be realized at the same time.
1. The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
2. This value is limited to 5.5 V maximum.
3. The maximum package power dissipation was calculated using a junction temperature of 150°C.
–0.5 to 7.0 V
CC
–0.5 to VCC + 0.5 V
I
–0.5 to VCC + 0.5 V Output : H or L
O
or I
I
CC
P
±25 mA
GND
200 mW
T
Recommended Operating Conditions
Item Symbol Min Max Unit Test Conditions
Supply voltage range VCC 4.5 5.5 V
Input voltage range VI 0 5.5 V
Output voltage range V
Input rise / fall time (Control input 0.3 V to 2.7 V)
Operating temperature Ta –40 85 °C
Note: Unused or floating control inputs must be held high or low.
0 VCC V
I/O
tr, tf 0 500 ns VCC = 4.5 to 5.5 V
Rev.5, Feb. 2003, page 3 of 3
Page 6
HD74HCT1G66
Electrical Characteristics
Ta = 25°C Ta = –40 to 85°C
Min Typ Max Min Max
2.0 2.0 Input voltage
Unit Test Conditions
V Control input only
Item
Symbol
VCC
(V)
VIH 4.5 to
5.5
V
4.5 to
IL
0.8 — 0.8
5.5
On resistance RON 4.5 to
5.5
90 160 — 180 Ω VC = V
VIN = VCC or GND
IH
IT = 1 mA
Peak on resistance
Leak current
RON (p) 4.5 to
5.5
125 200 — 250 VC = V
VIN = 0 to V I
IN/OUT
= 1 mA
IS (off) 5.5 ±0.1 — ±1.0 µA VC = VIL
V
= VCC, V
IN
or V
= GND,
IN
V
= VCC
OUT
(on) 5.5 ±0.1 — ±1.0 µA VC = VIH
I
S
V
= VCC or GND
IN
IH
CC
= GND
OUT
Input current IIN 5.5 — ±0.1 — ±1.0 µA VIN = VCC or GND
Operating
ICC 5.5 — 1.0 — 10.0 µA VIN = VCC or GND
current
Quiescent supply current
I
5.5 — 2.0 — 2.9 mA VC = 2.4 V,
CCT
V
(switch) = VCC or
IN
GND
Rev.5, Feb. 2003, page 4 of 4
Page 7
Switching Characteristics
HD74HCT1G66
Item
Propagation delay time t
Output enable time tZH, tZL 4.5 — 10 23 — 29 ns RL = 1 k
Output disable time tHZ, tLZ 4.5 — 14 23 — 29 ns RL = 1 k
Maximum control frequency
Control input capacitance CIN — 2.5 5 5 pF
Switch I/O capacitance C
Feed through capacitance C
Power dissipation capacitance
Symbol
, t
4.5 — 4 10 — 13 ns RL = 10 k
PLH
PHL
4.5 — 30 — MHz
2.5 — pF
IN/OUT
0.5 — pF
IN–OUT
CPD — 5 — — pF
Ta = 25°C Ta = –40 to 85°C
VCC
(V)
Min Typ Max Min Max
Unit Test Conditions
Test Circuit
R
ON
V
CC
VC = V
IH
V
CC
V
IN
= V
CC
(ON)
V
OUT
R
GND
+
1.0 mA
V
V
IN-OUT
ON
V
IN-OUT
=
10
(Ω)
–3
Rev.5, Feb. 2003, page 5 of 5
Page 8
HD74HCT1G66
IS (off), IS (on)
= V
V
C
IL
V
CC
VC = V
IH
V
CC
VIN = V
CC
or GND
t
, t
PLH
PHL
= V
V
C
IH
V
IN
tZH, tZL / tHZ, t
V
CC
A
(OFF)
GND
V
OUT
or V
= GND
CC
VIN = V or GND
A
CC
(ON)
V
CC
GND
V
OUT
OPEN
V
V
(ON)
GND
CC
CC
RL = 10 k
CL = 50 pF
V
OUT
tr = 6 ns tf = 6 ns
V
V
IN
OUT
90% 90%
1.3V 1.3V
t
PLH
1.3V 1.3V
3 V
10%10%
t
PHL
GND
V
OH
V
OL
LZ
V
CC
V
C
V
S1
IN
Item S1 S2
t
ZH
t
ZL
t
HZ
t
LZ
Notes: 1. Waveform - A is for an output with internal conditions such that the output is high except when disabled by the output control.
2. Waveform - B is for an output with internal conditions such that the output is low except when disabled by the output control.
Rev.5, Feb. 2003, page 6 of 6
V
CC
GND
V
CC
GND V
CC
GND
R =
L
1 k
V
OUT
CL = 50 pF
S2
=
R
L
1 k
GND V
CC
V
C
Waveform - A
V
OUT
Waveform - B
90% 90%
1.3V 1.3V
t
ZH
1.3V
t
ZL
1.3V
10%10%
t
HZ
90%
t
LZ
10%
GND V
CC
3 V
GND
V
OH
GND
V
CC
V
OL
tr = 6 ns tf = 6 ns
Page 9
Maximum control frequency
V
CC
V
C
V
CC
VIN = V
CC
GND
V
OUT
RL = 1 k
CL = 15 pF
V
V
C
OUT
HD74HCT1G66
V
CC
GND
VCC/2
C
IN/OUT
, C
IN-OUT
C
IN/OUT
V
= GND
C
C
IN-OUT
V
V
(OFF)
GND
CC
CC
C
IN/OUT
Rev.5, Feb. 2003, page 7 of 7
Page 10
HD74HCT1G66
Package Dimensions
(0.65)
5 – 0.2 ± 0.05
1.3 ± 0.2
2.0 ± 0.2
(0.65)
(0.2)
(0.425)(0.425) 1.25 ± 0.1
2.1 ± 0.3
0.9 ± 0.1
0.15
0 – 0.1
+ 0.1 – 0.05
Unit: mm
*Sn-Bi plating
Hitachi Code JEDEC JEITA
(reference value)
Mass
CMPAK-5V
Conforms
0.006 g
Rev.5, Feb. 2003, page 8 of 8
Page 11
HD74HCT1G66
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Sales Offices
Hitachi, Ltd.
Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109
URL http://www.hitachisemiconductor.com/
For further information write to:
Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223
Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322
Hitachi Europe GmbH Electronic Components Group Dornacher Str 3 D-85622 Feldkirchen Postfach 201, D-85619 Feldkirchen Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00
Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-6538-6533/6538-8577 Fax : <65>-6538-6933/6538-3877
URL : http://semiconductor.hitachi.com.sg
Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://semiconductor.hitachi.com.tw
Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-2735-9218 Fax : <852>-2730-0281 URL : http://semiconductor.hitachi.com.hk
Copyright © Hitachi, Ltd., 2003. All rights reserved. Printed in Japan.
Colophon 7.0
Rev.5, Feb. 2003, page 9 of 9
Loading...