HAMAMATSU L8933-72, L8933-71, L8933-62, L8933-42, L8933-41 Datasheet
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CW LASER DIODES
L8933 , L8446 , L8763 , L8828 SERIES
PRELIMINARY DATA
High optical power from a single chip
FEATURES
High optical power & high radiant flux density(CW)
L8933 series : 0.5 W / 50 m
L8446 series : 1 W / 100 m
L8763 series : 1 W / 50 m
L8828 series : 2 W / 100 m
High stability
Long life
Compact
APPLICATIONS
Pumping source for solid state lasers
Printing
Medical instrument
Measuring instrument
Material Processing
Marking
HAMAMATSU CW laser diodes, L8933, L8446, L8763, L8828 series feature high optical power of 0.5 to 2.0 W under CW operation. As this is single chip and single element type, emitting area is small (50 m to 100 m X 1m). Therefore, it is easy to focus on to a small spot with optics. It can be used for various applications such as pumping of solid lasers, printers, medical instruments etc.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. '2003 Hamamatsu Photonics K.K.
CW LASER DIODES |
L8933 , L8446 , L8763 , L8828 SERIES |
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ABSOLUTE MAXIMUM RATINGS (Top(c) = 25 °C) |
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Parameter |
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Symbol |
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Value |
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Unit |
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L8933 |
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L8446 |
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L8763 |
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L8828 |
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Radiant Output Power |
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Φe |
0.6 |
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1.2 |
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1.2 |
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2.2 |
W |
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Reverse Voltage |
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Vr |
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2 |
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V |
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Operating Temperature |
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Top(c) |
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0 to +30 |
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°C |
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Storage Temperature |
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Tstg |
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-30 to +80 |
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°C |
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CHARACTERISTICS (Top(c) = 25 °C) |
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Parameter |
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Symbol |
Conditions |
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Value |
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Unit |
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L8933 |
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L8446 |
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L8763 |
L8828 |
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Radiant Output Power |
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Φe |
- |
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0.5 |
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1 |
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1 |
2 |
W |
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Forward Current |
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If |
L8933 Φe = 0.5 W |
0.65 |
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1.2 |
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1.2 |
2.4 |
A |
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Peak Emission Wavelength |
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λp |
L8763 Φe = 1 W |
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808 ± 3 , 808 ± 5 , 808 ± 10 *1 |
nm |
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Spectral Radiation Half Bandwidth |
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∆λ |
L8446 Φe = 1 W |
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2 |
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nm |
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Forward Voltage |
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Vf |
L8828 Φe = 2 W |
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2 |
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V |
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Emitting Area Size |
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Value at designing |
50 X 1 |
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100 X 1 |
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50 X 1 |
100 X 1 |
m |
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Beam Spread Angle |
Parallel |
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θ// |
FWHM |
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8 |
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degree |
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Vertical |
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θ |
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32 |
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degree |
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Lasing Threshold Current |
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Ith |
- |
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0.15 |
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0.35 |
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0.35 |
0.6 |
A |
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*1 Tolerance of of peak emission wavelength can be selected from +/- 3nm, +/- 5nm and +/- 10nm for every type of laser diodes listed above. For its details, see the table of SUFFIX in the next page.
Other laser diodes of different peak emission wavelength are available, such as 830nm, 940nm and 980nm. Contact your local representative for more information.
Figure 1: Radiant Output Power vs. Forward Current (Typ.) |
Figure 2: Emission Spectrum (Typ.) |
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2.5 |
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( Top(c) = 25 °C ) |
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L8828 |
(W) |
2.0 |
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(%) |
Φ |
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Power |
e |
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Output |
Power |
1.5 |
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L8446 |
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OutputRadiant |
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L8763 |
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RadiantRelative |
1.0 |
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L8933 |
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0.5 |
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0 |
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0 |
0.5 |
1.0 |
1.5 |
2.0 |
2.5 |
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Forward Current |
I f (A) |
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( Top(c) = 25 °C )
100
80
60
40
20
0
804 |
806 |
808 |
810 |
812 |
Wavelength (nm)
Figure 3: Directivity (Typ.)
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100 |
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(Top(c) = 25 °C ) |
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Parallel |
Parallel |
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Vertical |
Vertical |
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Direction |
Direction |
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Direction |
Direction |
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(%) |
80 |
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Power |
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Top View |
Side View |
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Side View |
Top View |
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Parallel |
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Direction |
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Vertical |
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60 |
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Direction |
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Output |
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Top View |
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Top View |
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Radiant |
40 |
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Relative |
20 |
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0 |
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40 |
30 |
20 |
10 |
0 |
10 |
20 |
30 |
40 |
Angle (degree)
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