GME RB751V-40 Schematic [ru]
Production specification
Schottky Barrier Diode RB751V-40
FEATURES
z High reliability
z Low voltage; Low inductance
Pb
Lead-free
z Low V
F
APPLICATIONS
z Low current rectification. SOD-323
ORDERING INFORMATION
Type No. Marking Package Code
RB751V-40 5 SOD-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Peak reverse voltage
DC reverse voltage
Mean rectifying current
Peak forward surge current
Junction temperature
Storage temperature
Symbol Limits Unit
V
V
I
O
I
FSM
T
T
RM
R
j
stg
40 V
30 V
30 mA
200 mA
125 ℃
-40 to+125 ℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Min. Typ. Max. Unit Conditions
Forward voltage V
Reverse current I
Capacitance between terminals C
F
R
T
0.37 V IF=1mA
0.5 μA VR=30v
2 pF VR=1V,f=1MHz
B023 www.gmicroelec.com
Rev.A 1
Production specification
Schottky Barrier Diode RB751V-40
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
PACKAGE OUTLINE
Plastic surface mounted package SOD-323
D
K
A
H
E
J
C
B
Dim Min Max
A 1.60 1.80
B
C 0.9 Typical
D 0.30 Typical
E 0.22 0.42
H 0.02 0.1
J 0.1 Typical
K
All Dimensions in mm
SOD-323
1.20 1.40
2.55 2.75
B023 www.gmicroelec.com
Rev.A 2
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