GME RB715F Schematic [ru]

Production specification

Schottky Barrier Diode RB715F

FEATURES

z Extra small power mold type.

z Low V

.

F

z High reliability.

APPLICATIONS

z General purpose application.

SOT-323

ORDERING INFORMATION

Type No. Marking Package Code

RB715F 3D SOT-323

Pb

Lead-free

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Parameter Symbol Limits Unit

Peak reverse voltage

Diode reverse voltage

Average forward current

Forward Surge Current t=1μS

Power Dissipation

Junction temperature

Storage temperature range

V

40 V

RM

V

R

I

F

I

FS

P

d

T

j

T

stg

40 V

30 mA

200 mA

150 mW

125 ℃

-40 to +125 ℃

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter Symbol Test conditions MIN MAX UNIT

Reverse breakdown voltage V

Reverse voltage leakage current IR V

Forward voltage VF

Diode capacitance CD V

F027 www.gmicroelec.com
Rev.A 1

I

(BR)R

= 100μA 40 V

R

=10V 1 μA

R

=1mA 370

I

F

=1V f=1MHz 2.0 pF

R

mV

Production specification

Schottky Barrier Diode RB715F

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

F027 www.gmicroelec.com
Rev.A 2