GME MMBTA44 Schematic [ru]
Production specification
NPN High Voltage Amplifier MMBTA44
FEATURES
z Collector-Emitter voltage:V
z Collector current up to 300mA.
z Complement to MMBTA94.
CEO
=400V.
Pb
Lead-free
z Power dissipation:P
(max)=350mW.
d
APPLICATIONS
z High voltage transistor.
SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
MMBTA44 3D SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value UNIT
V
V
CBO
CEO
collector-base voltage 500 V
collector-emitter voltage 400 V
V
EBO
I
C
P
C
R
θJA
Tj ,T
stg
emitter-base voltage 6 V
collector current (DC) 0.3 A
Collector dissipation 0.35 W
Thermal resistance Junction-to-ambient 200 °C/W
junction and storage temperature -40 to +150 °C
C147 www.gmicroelec.com
Rev.A 1
Production specification
NPN High Voltage Amplifier MMBTA44
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Symbol Parameter Test conditions MIN. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CES
I
EBO
h
FE
V
CE(sat)
Collector-base breakdown voltage IC=100μA,IE=0 500 - V
Collector-emitter breakdown voltage IC=1.0mA,IB=0 400 - V
Emitter-base breakdown voltage IE=10μA,IC=0 6 - V
collector cut-off current IE = 0,V
collector cut-off current V
BE
emitter cut-off current IC = 0,V
V
CE
V
DC current gain
Collector-emitter saturation voltage
CE
V
CE
V
CE
=1mA; IB =0.1mA
I
C
I
=10mA; IB =1mA
C
I
=50mA; IB =5mA
C
= 400V - 0.1 μA
CB
= 0,V
=10V; IC=1mA
=10V;IC =10mA
=10V;IC =50mA
=10V;IC =100mA
= 400V - 0.5 μA
CE
= 4V - 0.1 μA
EB
40
100
45
40
-
-
200
-
-
0.4
0.5
0.75
V
V
BE(sat)
f
T
Base-emitter saturation voltage IC =10mA; IB=1mA - 0.75 V
V
=20V,IC=10mA
Current gain bandwidth product
CE
F=100MHz
50 - MHz
Cob Output Capacitance VCB=20V, IE =0, f=1MHz - 7 pF
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
C147 www.gmicroelec.com
Rev.A 2
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