General Semiconductor SD106WS Datasheet
SD106WS
SCHOTTKY DIODES
FEATURES
¨ Low turn-on voltage
¨ Fast switching
¨ Microminiature plastic package
¨ These devices are protected by a PN
junction guard ring against excessive voltage,
such as electrostatic discharge.
¨ Ideal for protection of MOS devices, steering, biasing,
and coupling diodes for fast switching and low logic level
applications.
MECHANICAL DATA
Case: SOD-323 Plastic Package
Weight: approx. 0.004g
Marking Code: S2
MAXIMUM RATINGS
Ratings at 25¡C ambient temperature unless otherwise specified
SYMBOL VALUE UNIT
Continuous Reverse Voltage V
R
30 Volts
Forward Current I
F
200 mA
Forward Surge Current, tp= 10ms I
FSM
1.0 A
Power Dissipation TC= 25¡C P
tot
250
(NOTE 1)
mW
Thermal Resistance Junction to Ambient Air R
QJA
500 ¡C/W
Junction Temperature T
j
150 ¡C
Storage Temperature Range T
S
-65 to + 150 ¡C
NOTES:
(1) Valid provided that electrodes are kept at ambient temperature
max. .006 (0.15)
min. .010 (0.25)
.012 (0.3)
.076 (1.95)
.112 (2.85)
.059 (1.5)
max. .004 (0.1)
max. .049 (1.25)
Cathode Mark
To p View
.100 (2.55)
.065 (1.65)
.043 (1.1)
SOD-323
2/8/99
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
SYMBOL MIN. TYP. MAX. UNIT
Reverse Breakdown Voltage at IR= 100 mABVR30 Ð Ð Volts
Leakage Current at VR= 30 V I
R
Ð Ð 5.0 mA
Forward Voltage
at I
F
= 2.0 mA V
F
Ð 260 Ð mV
at I
F
= 15 mA V
F
Ð 320 Ð mV
at I
F
= 100 mA V
F
Ð 420 Ð mV
at IF= 200mA V
F
Ð 490 550 mV
Junction Capacitance at V
R
= 10V, f = 1.0MH
Z
C
tot
Ð Ð Max 15 pF
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