General Semiconductor S3A, S3B, S3D, S3J, S3G Datasheet

S3A THRU S3M

0.006 (0.152)

0.012 (0.305)

0.030 (0.76)

0.060 (1.52)

0.008 (0.203)

0.305 (7.75)

0.320 (8.13)

0.260 (6.60)

0.280 (7.11)

0.079 (2.06)

0.103 (2.62)

0.220 (5.59)

0.245 (6.22)

0.126 (3.20)

0.114 (2.90)

MAX.

SURFACE MOUNT RECTIFIER

Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes

DO-214AB

MODIFIED J-BEND

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

FEATURES

♦ Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

♦ For surface mount applications
♦ Low profile package
♦ Built-in strain relief,

ideal for automated placement

♦ Glass passivated chip junction
♦ High temperature soldering:

260°C/10 seconds at terminals

MECHANICAL DATA

Case: JEDEC DO-214AB molded plastic body over

passivated chip
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026

Polarity: Color band denotes cathode end
Weight: 0.007 ounce, 0.25 gram

SYMBOLS S3A S3B S3D S3G S3J S3K S3M UNITS

Device marking code SA SB SD SG SJ SK SM
Maximum recurrent peak reverse voltage V
Maximum RMS voltage V
Maximum DC blocking voltage V
Maximum average forward rectified current

=75°C

at T

L

(NOTE 3)

RRM
RMS

I

(AV)

DC

50 100 200 400 600 800 1000 Volts
35 70 140 280 420 560 700 Volts
50 100 200 400 600 800 1000 Volts

3.0 Amps

Peak forward surge current

8.3ms single half sine-wave superimposed on I
rated load (JEDEC Method) T

=75°C

L

FSM

Maximum instantaneous forward voltage at 2.5A V
Maximum DC reverse current T

at rated DC blocking voltage T
Typical reverse recovery time
Typical junction capacitance
Typical thermal resistance

(NOTE 3)

(NOTE 1)

(NOTE 2)

=25°C 10.0

A

=125°C

A

R
R

Operating junction and storage temperature range T

NOTES:

(1) Reverse recovery test conditions:I
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient and from junction to lead mounted on

P.C.B.with 0.3 x 0.3” (8.0 x 8.0mm) copper pad areas

=0.5A, IR=1.0A, Irr=0.25A

F

, T

J

I

R

t

rr

C

ΘJA
ΘJL

F

J

STG

100.0 Amps

1.15 Volts

250.0

2.5 µs

60.0 pF

47.0

13.0

-55 to +150 °C

µA

°C/W

4/98

150

0

50 60 70 80 90 100 110 120 130140 160

0.5

1.0

1.5

2.0

2.5

3.5

1

100

10 100

10

200

0.6 0.7

10

100

0.8 0.9 1.1 1.2 1.3

0.01

0.1

1

10

100

1.0

110100

3.0

0 20406080100

0.1

1

10

100

0.01 0.1 1 10 100

0.1

1

10

100

RATINGS AND CHARACTERISTIC CURVES S3A THRU S3M

FIG. 2 - MAXIMUM NON-REPETITIVE PEAK

FIG. 1 - FORWARD CURRENT DERATING CURVE

RESISTIVE OR INDUCTIVE LOAD

FORWARD SURGE CURRENT

TL=75°C

8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)

AMPERES

AVERAGE FORWARD CURRENT,

P.C.B.MOUNTED on

0.3 x 0.3” (8.0 x 8.0mm)
COPPER PAD AREAS

LEAD TEMPERATURE, °C

FIG. 3 - TYPICAL INSTANTANEOUS

FORWARD CHARACTERISTICS

TJ=25°C
PULSE WIDTH=300µs
1% DUTY CYCLE

AMPERES

PEAK FORWARD SURGE CURRENT,

MICROAMPERES

NUMBER OF CYCLES AT 60 H

Z

FIG. 4 - TYPICAL REVERSE CHARACTERISTICS

TJ=125°C

INSTANTANEOUS FORWARD CURRENT, AMPERES

JUNCTION CAPACITANCE, pF

INSTANTANEOUS FORWARD VOLTAGE,

FIG. 5 - TYPICAL JUNCTION CAPACITANCE

VOLTS

TJ=25°C
f=1.0 MH
Vsig=50mVp-p

REVERSE VOLT AGE, VOL TS

INSTANTANEOUS REVERSE CURRENT,

TJ=25°C

PERCENT OF RATED PEAK REVERSE

FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE

MOUNTED ON 0.20 x 0.27” (5 x 7mm)
COPPER PAD AREAS

Z

TRANSIENT THERMAL IMPEDANCE (°C/W)

t, PULSE DURATION, sec

VOLTAGE, %