General Semiconductor IDB31 Datasheet
IDB31
PLANAR SILICON BIDIRECTIONAL TRIGGER DIODE
FEATURES
¨ Intend for use in triac and thyristors circuits
¨ VBO: 30V to 34V
¨ Excellent Breakover Voltage
Symmetry: typ. 1%
¨ Low Breakover Current: 20µA typ.
¨ Marking: B31
¨ Bidirectional Operation:
Pin 2 and 3 connected to the circuit
Pin 1 has to stay open
IMPORTANT
Do not connect Pin 1 to ground, VCC or any signal lines.
Pin 1 has to be soldered at a solderpad without any further
lines
MECHANICAL DATA
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Marking code: B31
MAXIMUM RATINGS
In accordance with the Absolut Maximum Rating System (IEC 134).
SYMBOL VALUE UNIT
Power dissipation P
tot
150
(NOTE 1)
mW
Repetitive peak on-state current
tp=20µs, f=100Hz
I
TRM
2 Amps
Operating junction temperature range
at tp < 1 s, T
amb
= 25 ¡C
T
J
-40 to +125 ¡C
Storage temperature range T
S
-40 to +125 ¡C
Thermal resistance junction to ambient air R
thA
400
(NOTE 1)
¡C/W
NOTES:
(1) Device on fiberglass substrate, see layout in Fig. 4
.016 (0.4)
.056 (1.43
)
.037(0.95)
.037(0.95)
max. .004 (0.1)
.122 (3.1)
.016 (0.4) .016 (0.4)
1
2
3
Top View
.102 (2.6)
.007 (0.175)
.045 (1.15)
.118 (3.0)
.052 (1.33
)
.005 (0.125)
.094 (2.4)
.037 (0.95)
SOT-23
Dimensions in inches and (millimeters)
1/15/99
1
23
Top View
NEW PRODUCT NEW PRODUCT NEW PRODUCT
ELECTRICAL CHARACTERISTICS
at Tj = 25 ¡C, unless otherwise specified; electrical characteristics applicable in both, forward and reverse direction
SYMBOL MIN. TYP. MAX. UNIT
Breakover Voltage
see Fig. 1
V
BO
30 32 34 Volts
Breakover Voltage Symmetry
see Fig. 1
½V
BO1
½-½V
BO2
½ - - ±2 Volts
Dynamic Breakback Voltage
(IBOto IF=10mA), see Fig. 1
½DV½ 5 8 - Volts
Output Voltage
see Fig. 2
V
O
5 - - Volts
Breakover Current
see Fig. 1
I
BO
42050mA
Rise time
see Fig. 3
t
r
- 100 - ns
Leakage current
VB=0,5·VBOmax. I
B
- - 0.5 mA
see Fig. 1
10mA
I
BO
-I
F
+I
F
I
B
V
BO
V
BO1
V
BO2
+V
-V
DV
0.5
FIG. 1 - CURRENT-VOLTAGE CHARACTERISTICS
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