General Semiconductor BC848C, BC849A, BC849C, BC849B, BC848A Datasheet
...
BC846 THRU BC849
Small Signal Transistors (NPN)
Ratings at
SOT-23
.122 (3.1)
.118 (3.0)
.016 (0.4)
3
12
.037(0.95)
.037(0.95)
.016 (0.4) .016 (0.4)
Dimensions in inches and (millimeters)
Top View
)
.056 (1.43
max. .004 (0.1)
)
.052 (1.33
.007 (0.175)
.005 (0.125)
.102 (2.6)
.094 (2.4)
Pin configuration
1 = Base, 2 = Emitter, 3 = Collector.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ambient temperature unless otherwise specified
25 °C
FEATURES
♦
NPN Silicon Epitaxial Planar Transistors
for switching and AF amplifier applications.
♦
Especially suited for automatic insertion in
thick- and thin-film circuits.
These transistors are subdivided into three
♦
groups A, B and C according to their current gain. The
type BC846 is available in groups A and B, however, the
types BC847 and BC848 can be supplied in all three
groups. The BC849 is a low noise type available in groups
B and C. As complementary types, the PNP transistors
.045 (1.15)
.037 (0.95)
BC856...BC859 are recommended.
MECHANICAL DATA
Case: SOT-23 Plastic Package
Weight: approx. 0.008 g
Marking code
Type Marking
BC846A
B
BC847A
B
C
1A
1B
1E
1F
1G
Type Marking
BC848A
B
C
BC849B
C
1J
1K
1L
2B
2C
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current I
Peak Collector Current I
Peak Base Current I
Peak Emitter Current –I
Power Dissipation at TSB = 50 °C P
Junction Temperature T
Storage Temperature Range T
1)
Device on fiberglass substrate, see layout
BC846
BC847
BC848, BC849
BC846
BC847
BC848, BC849
BC846
BC847
BC848, BC849
BC846, BC847
BC848, BC849
Symbol Value Unit
V
V
V
V
V
V
V
V
V
V
V
C
CM
BM
CBO
CBO
CBO
CES
CES
CES
CEO
CEO
CEO
EBO
EBO
EM
tot
j
S
80
50
30
80
50
30
65
45
30
6
5
100 mA
200 mA
200 mA
200 mA
1)
310
150 °C
–65 to +150 °C
V
V
V
V
V
V
V
V
V
V
V
mW
5/98
BC846 THRU BC849
Ratings at
h-Parameters at V
f = 1 kHz,
Small Signal Current Gain
Input Impedance
Output Admittance
Reverse Voltage Transfer Ratio
DC Current Gain
at V
at VCE = 5 V, IC = 2 mA
Thermal Resistance Junction to Substrate
Backside
Thermal Resistance Junction to Ambient Air R
Collector Saturation Voltage
at I
at I
Base Saturation Voltage
at I
at I
Base-Emitter Voltage
at V
at V
Collector-Emitter Cutoff Current
at V
at VCE = 50 V
at VCE = 30 V
at VCE = 80 V, Tj = 125 °C
at VCE = 50 V, Tj = 125 °C
at VCE = 30 V, Tj = 125 °C
Gain-Bandwidth Product
at V
1)
Device on fiberglass substrate, see layout
ambient temperature unless otherwise specified
25 °C
= 5 V, IC = 2 mA,
CE
Current Gain Group A
Current Gain Group A
Current Gain Group A
Current Gain Group A
= 5 V, IC = 10 µA
CE
Current Gain Group A
Current Gain Group A
= 10 mA, IB = 0.5 mA
C
= 100 mA, IB = 5 mA
C
= 10 mA, IB = 0.5 mA
C
= 100 mA, IB = 5 mA
C
= 5 V, IC = 2 mA
CE
= 5 V, IC = 10 mA
CE
= 80 V
CE
= 5 V, IC = 10 mA, f = 100 MHz
CE
B
C
B
C
B
C
B
C
B
C
B
C
BC846
BC847
BC848, BC849
BC846
BC847
BC848, BC849
ELECTRICAL CHARACTERISTICS
Symbol Min. Typ. Max. Unit
h
fe
h
fe
h
fe
h
ie
h
ie
h
ie
h
oe
h
oe
h
oe
h
re
h
re
h
re
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
R
thSB
thJA
V
CEsat
V
CEsat
V
BEsat
V
BEsat
V
BE
V
BE
I
CES
I
CES
I
CES
I
CES
I
CES
I
CES
f
T
–
–
–
1.6
3.2
6
–
–
–
–
–
–
–
–
–
110
200
420
– – 320
– – 450
–
–
–
–
580
–
–
–
–
–
–
–
– 300 – MHz
220
330
600
2.7
4.5
8.7
18
30
60
1.5 · 10
2 · 10
3 · 10
90
150
270
180
290
520
90
200
700
900
660
–
0.2
0.2
0.2
–
–
–
–
–
–
4.5
8.5
15
30
60
110
–4
–
–4
–
–4
–
–
–
–
220
450
800
1)
1)
250
600
–
–
700
720
15
15
15
4
4
4
–
–
–
k
Ω
k
Ω
k
Ω
S
µ
S
µ
S
µ
–
–
–
–
–
–
–
–
–
K/W
K/W
mV
mV
mV
mV
mV
mV
nA
nA
nA
µ
A
µ
A
µ
A
Loading...