General Semiconductor BC848C, BC849A, BC849C, BC849B, BC848A Datasheet

BC846 THRU BC849

Small Signal Transistors (NPN)

SOT-23
.122 (3.1)
.118 (3.0)
.016 (0.4)		Top View
3	(1.43)	(1.33)
	.056	.052
1	2	(0.175).007	(0.125).005
.037(0.95)	..max004 (0.1)			(1.15)	(0.95)
	.037(0.95)
				.045	.037

							.102 (2.6)
	.016 (0.4)			.016 (0.4)
								.094 (2.4)

Dimensions in inches and (millimeters)

Pin configuration

1 = Base, 2 = Emitter, 3 = Collector.

FEATURES

♦ NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications.

♦ Especially suited for automatic insertion in thickand thin-film circuits.

♦These transistors are subdivided into three

groups A, B and C according to their current gain. The type BC846 is available in groups A and B, however, the types BC847 and BC848 can be supplied in all three groups. The BC849 is a low noise type available in groups B and C. As complementary types, the PNP transistors BC856...BC859 are recommended.

MECHANICAL DATA

Case: SOT-23 Plastic Package

Weight: approx. 0.008 g

Marking code

Type	Marking		Type	Marking
BC846A	1A		BC848A	1J
B	1B		B	1K
BC847A	1E		C	1L
B	1F		BC849B	2B
C	1G		C	2C

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

		Symbol	Value	Unit
Collector-Base Voltage	BC846	VCBO	80	V
	BC847	VCBO	50	V
	BC848, BC849	VCBO	30	V
Collector-Emitter Voltage	BC846	VCES	80	V
	BC847	VCES	50	V
	BC848, BC849	VCES	30	V
Collector-Emitter Voltage	BC846	VCEO	65	V
	BC847	VCEO	45	V
	BC848, BC849	VCEO	30	V
Emitter-Base Voltage	BC846, BC847	VEBO	6	V
	BC848, BC849	VEBO	5	V
Collector Current		IC	100	mA
Peak Collector Current		ICM	200	mA
Peak Base Current		IBM	200	mA
Peak Emitter Current		–IEM	200	mA
Power Dissipation at TSB = 50 °C		Ptot	3101)	mW
Junction Temperature		Tj	150	°C
Storage Temperature Range		TS	–65 to +150	°C
1) Device on fiberglass substrate, see layout

5/98

BC846 THRU BC849

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

				Symbol	Min.	Typ.	Max.	Unit
	h-Parameters at VCE = 5 V, IC = 2 mA,
	f = 1 kHz,
	Small Signal Current Gain
		Current Gain Group A		hfe	–	220	–	–
			B	hfe	–	330	–	–
			C	hfe	–	600	–	–
	Input Impedance	Current Gain Group A		hie	1.6	2.7	4.5	kΩ
			B	hie	3.2	4.5	8.5	kΩ
			C	hie	6	8.7	15	kΩ
	Output Admittance	Current Gain Group A		hoe	–	18	30	μS
			B	hoe	–	30	60	μS
	Reverse Voltage Transfer Ratio		C	hoe	–	60	110	μS
				hre	–	1.5 · 10–4	–	–
		Current Gain Group A
			B	hre	–	2 · 10–4	–	–
			C	hre	–	3 · 10–4	–	–
	DC Current Gain
	at VCE = 5 V, IC = 10 μA
		Current Gain Group A		hFE	–	90	–	–
			B	hFE	–	150	–	–
	at VCE = 5 V, IC = 2 mA		C	hFE	–	270	–	–
		Current Gain Group A		hFE	110	180	220	–
			B	hFE	200	290	450	–
			C	hFE	420	520	800	–
	Thermal Resistance Junction to Substrate			RthSB	–	–	3201)	K/W
	Backside
	Thermal Resistance Junction to Ambient Air			RthJA	–	–	4501)	K/W
	Collector Saturation Voltage
	at IC = 10 mA, IB = 0.5 mA			VCEsat	–	90	250	mV
	at IC = 100 mA, IB = 5 mA			VCEsat	–	200	600	mV
	Base Saturation Voltage
	at IC = 10 mA, IB = 0.5 mA			VBEsat	–	700	–	mV
	at IC = 100 mA, IB = 5 mA			VBEsat	–	900	–	mV
	Base-Emitter Voltage
	at VCE = 5 V, IC = 2 mA			VBE	580	660	700	mV
	at VCE = 5 V, IC = 10 mA			VBE	–	–	720	mV
	Collector-Emitter Cutoff Current
	at VCE = 80 V		BC846	ICES	–	0.2	15	nA
	at VCE = 50 V		BC847	ICES	–	0.2	15	nA
	at VCE = 30 V		BC848, BC849	ICES	–	0.2	15	nA
	at VCE = 80 V, Tj = 125 °C		BC846	ICES	–	–	4	μA
	at VCE = 50 V, Tj = 125 °C		BC847	ICES	–	–	4	μA
	at VCE = 30 V, Tj = 125 °C		BC848, BC849	ICES	–	–	4	μA
	Gain-Bandwidth Product			fT	–	300	–	MHz
	at VCE = 5 V, IC = 10 mA, f = 100 MHz
	1) Device on fiberglass substrate, see layout