General Semiconductor BC548C, BC548A, BC549C, BC549B, BC549A Datasheet

BC546 THRU BC549

Small Signal Transistors (NPN)

TO-92

.181 (4.6)	.142 (3.6)

min..492 (12.5) .181 (4.6)

max. .022 (0.55)

	.098 (2.5)
C	E

FEATURES

♦NPN Silicon Epitaxial Planar Transistors

♦These transistors are subdivided into three groups A, B and C according to their current gain. The type

BC546 is available in groups A and B, however, the types BC547 and BC548 can be supplied in all three groups. The BC549 is a low-noise type and available in groups B and

C. As complementary types, the PNP transistors BC556 … BC559 are recommended.

♦On special request, these transistors are also manufactured in the pin configuration TO-18.

B

Dimensions in inches and (millimeters)

MECHANICAL DATA

Case: TO-92 Plastic Package

Weight: approx. 0.18 g

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

		Symbol		Value	Unit
Collector-Base Voltage	BC546	VCBO		80	V
	BC547	VCBO		50	V
	BC548, BC549	VCBO		30	V
Collector-Emitter Voltage	BC546	VCES		80	V
	BC547	VCES		50	V
	BC548, BC549	VCES		30	V
Collector-Emitter Voltage	BC546	VCEO		65	V
	BC547	VCEO		45	V
	BC548, BC549	VCEO		30	V
Emitter-Base Voltage	BC546, BC547	VEBO		6	V
	BC548, BC549	VEBO		5	V
Collector Current		IC		100	mA
Peak Collector Current		ICM		200	mA
Peak Base Current		IBM		200	mA
Peak Emitter Current		–IEM		200	mA
Power Dissipation at T	= 25 °C	P	tot	5001)	mW
amb
Junction Temperature		Tj		150	°C
Storage Temperature Range		TS		–65 to +150	°C

1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case

4/98

BC546 THRU BC549

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

		Symbol	Min.	Typ.	Max.	Unit
h-Parameters at VCE = 5 V, IC = 2 mA,
f = 1 kHz,
Small Signal Current Gain
Current Gain Group A		hfe	–	220	–	–
	B	hfe	–	330	–	–
	C	hfe	–	600	–	–
Input Impedance Current Gain Group A		hie	1.6	2.7	4.5	kΩ
	B	hie	3.2	4.5	8.5	kΩ
	C	hie	6	8.7	15	kΩ
Output Admittance Current Gain Group A		hoe	–	18	30	μS
	B	hoe	–	30	60	μS
Reverse Voltage Transfer Ratio	C	hoe	–	60	110	μS
Current Gain Group A		hre	–	1.5 · 10–4	–	–
	B	hre	–	2 · 10–4	–	–
	C	hre	–	3 · 10–4	–	–
DC Current Gain
at VCE = 5 V, IC = 10μA						–
Current Gain Group A		hFE	–	90	–
	B	hFE	–	150	–	–
at VCE = 5 V, IC = 2 mA	C	hFE	–	270	–	–
Current Gain Group A		hFE	110	180	220	–
	B	hFE	200	290	450	–
at VCE = 5 V, IC = 100 mA	C	hFE	420	500	800	–
Current Gain Group A		hFE	–	120	–	–
	B	hFE	–	200	–	–
	C	hFE	–	400	–	–
Thermal Resistance Junction to Ambient Air		R	–	–	2501)	K/W
		thJA
Collector Saturation Voltage		VCEsat
at IC = 10 mA, IB = 0.5 mA			–	80	200	mV
at IC = 100 mA, IB = 5 mA		VCEsat	–	200	600	mV
Base Saturation Voltage		VBEsat
at IC = 10 mA, IB = 0.5 mA			–	700	–	mV
at IC = 100 mA, IB = 5 mA		VBEsat	–	900	–	mV
Base-Emitter Voltage		VBE
at VCE = 5 V, IC = 2 mA			580	660	700	mV
at VCE = 5 V, IC = 10 mA		VBE	–	–	720	mV
Collector-Emitter Cutoff Current
at VCE = 80 V	BC546	ICES	–	0.2	15	nA
at VCE = 50 V	BC547	ICES	–	0.2	15	nA
at VCE = 30 V	BC548, BC549	ICES	–	0.2	15	nA
at VCE = 80 V, Tj = 125 °C	BC546	ICES	–	–	4	μA
at VCE = 50 V, Tj = 125 °C	BC547	ICES	–	–	4	μA

1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case