General Semiconductor BC548C, BC548A, BC549C, BC549B, BC549A Datasheet
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FEATURES
MECHANICAL DATA
Case:
TO-92 Plasti c Package
Weight:
approx. 0.18 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Small Signal Transistor s (NPN)
B
E
C
.181 (4.6)
min. .492 (12.5)
.181 (4.6)
.142 (3.6)
Dimensions in inches and (millimeters)
TO-92
Ratings at
25 °C
ambient temperature unless otherwise specified
.098 (2.5)
max.
∅
.022 (0.55)
4/98
BC546 THRU BC549
Symbol Value Unit
Collector-Base V oltage BC546
BC547
BC548, BC549
V
CBO
V
CBO
V
CBO
80
50
30
V
V
V
Collector-Emitter Voltage BC546
BC547
BC548, BC549
V
CES
V
CES
V
CES
80
50
30
V
V
V
Collector-Emitter Voltage BC546
BC547
BC548, BC549
V
CEO
V
CEO
V
CEO
65
45
30
V
V
V
Emitter-Base Voltage BC546, BC547
BC548, BC549
V
EBO
V
EBO
6
5
V
V
Collector Current I
C
100 mA
Peak Collector Current I
CM
200 mA
Peak Base Current I
BM
200 mA
Peak Emitter Current –I
EM
200 mA
Power Dissipation at T
amb
= 25 °C P
tot
500
1)
mW
Junction Temperature T
j
150 °C
Storage Temperature Range T
S
–65 to +150 °C
1)
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
NPN Silicon Epitaxial Planar Transistors
These transistors are subdivided into three groups
A, B and C according to their current gain. The type
BC546 is available in groups A and B, however, the types BC547 and BC548 can be
supplied in all three groups. The BC549 is a
low-noise type and available in groups B and
C. As complementary types, the PNP transistors BC556 … BC559 are recommended.
On special request, these transistors are also
manufactured in the pin configuration TO-18.
♦
♦
♦
ELECTRICAL CHARACTERISTICS
Ratings at
25 °C
ambient temperature unless otherwise specified
Symbol Min. Typ. Max. Unit
h-Parameters at VCE = 5 V, IC = 2 mA,
f = 1 kHz,
Small Signal Current Gain
Current Gain Group A
B
C
Input Impedance
Current Gain Group A
B
C
Output Admittance
Current Gain Group A
B
C
Reverse Voltage Transfer Ratio
Current Gain Group A
B
C
h
fe
h
fe
h
fe
h
ie
h
ie
h
ie
h
oe
h
oe
h
oe
h
re
h
re
h
re
–
–
–
1.6
3.2
6
–
–
–
–
–
–
220
330
600
2.7
4.5
8.7
18
30
60
1.5 · 10
–4
2 · 10
–4
3 · 10
–4
–
–
–
4.5
8.5
15
30
60
110
–
–
–
–
–
–
k
Ω
k
Ω
k
Ω
µ
S
µ
S
µ
S
–
–
–
DC Current Gain
at V
CE
= 5 V, IC = 10µA
Current Gain Group A
B
C
at VCE = 5 V, IC = 2 mA
Current Gain Group A
B
C
at VCE = 5 V, IC = 100 mA
Current Gain Group A
B
C
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
–
–
–
110
200
420
–
–
–
90
150
270
180
290
500
120
200
400
–
–
–
220
450
800
–
–
–
–
–
–
–
–
–
–
–
–
Thermal Resistance Junction to Ambient Air R
thJA
– – 250
1)
K/W
Collector Saturation Voltage
at I
C
= 10 mA, IB = 0.5 mA
at I
C
= 100 mA, IB = 5 mA
V
CEsat
V
CEsat
–
–
80
200
200
600
mV
mV
Base Saturation Voltage
at I
C
= 10 mA, IB = 0.5 mA
at I
C
= 100 mA, IB = 5 mA
V
BEsat
V
BEsat
–
–
700
900
–
–
mV
mV
Base-Emitter Voltage
at V
CE
= 5 V, IC = 2 mA
at V
CE
= 5 V, IC = 10 mA
V
BE
V
BE
580
–
660
–
700
720
mV
mV
Collector-Emitter Cutoff Current
at V
CE
= 80 V BC546
at V
CE
= 50 V BC547
at V
CE
= 30 V BC548, BC549
at V
CE
= 80 V, Tj = 125 °C BC546
at V
CE
= 50 V, Tj = 125 °C BC547
I
CES
I
CES
I
CES
I
CES
I
CES
–
–
–
–
–
0.2
0.2
0.2
–
–
15
15
15
4
4
nA
nA
nA
µ
A
µ
A
1)
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
BC546 THRU BC549
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