General Semiconductor BC557C, BC558C, BC558B, BC558A, BC559C Datasheet

BC556 THRU BC559

Small Signal Transistors (PNP)

TO-92

.181 (4.6)	.142 (3.6)

min..492 (12.5) .181 (4.6)

max. .022 (0.55)

	.098 (2.5)
C	E

FEATURES

♦PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications.

♦These transistors are subdivided into three groups A, B and C according to their current gain. The type BC556 is available in groups A and B, however, the types

BC557 and BC558 can be supplied in all three groups. The BC559 is a low-noise type available in all three groups. As complementary types, the NPN transistors BC546 … BC549 are recommended.

♦On special request, these transistors are also manufactured in the pin configuration TO-18.

B

Dimensions in inches and (millimeters)

MECHANICAL DATA

Case: TO-92 Plastic Package

Weight: approx. 0.18 g

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

		Symbol		Value	Unit
Collector-Base Voltage	BC556	–VCBO		80	V
	BC557	–VCBO		50	V
	BC558, BC559	–VCBO		30	V
Collector-Emitter Voltage	BC556	–VCES		80	V
	BC557	–VCES		50	V
	BC558, BC559	–VCES		30	V
Collector-Emitter Voltage	BC556	–VCEO		65	V
	BC557	–VCEO		45	V
	BC558, BC559	–VCEO		30	V
Emitter-Base Voltage		–VEBO		5	V
Collector Current		–IC		100	mA
Peak Collector Current		–ICM		200	mA
Peak Base Current		–IBM		200	mA
Peak Emitter Current		IEM		200	mA
Power Dissipation at T	= 25 °C	P	tot	5001)	mW
amb
Junction Temperature		Tj		150	°C
Storage Temperature Range		TS		–65 to +150	°C

1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.

4/98

BC556 THRU BC559

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

			Symbol	Min.	Typ.	Max.	Unit
h-Parameters
at –VCE = 5 V, –IC = 2 mA, f = 1 kHz
Current Gain	Current Gain Group A		hfe	–	220	–	–
		B	hfe	–	330	–	–
Input Impedance		C	hfe	–	600	–	–
	Current Gain Group A		hie	1.6	2.7	4.5	kΩ
		B	hie	3.2	4.5	8.5	kΩ
		C	hie	6	8.7	15	kΩ
Output Admittance	Current Gain Group A		hoe	–	18	30	μS
		B	hoe	–	30	60	μS
Reverse Voltage Transfer Ratio		C	hoe	–	60	110	μS
					1.5 · 10–4		–
	Current Gain Group A		hre	–		–
		B	hre	–	2 · 10–4	–	–
		C	hre	–	3 · 10–4	–	–
DC Current Gain
at –VCE = 5 V, –IC = 10 μA			hFE	–	90	–	–
	Current Gain Group A
		B	hFE	–	150	–	–
							–
		C	hFE	–	270	–
at –VCE = 5 V, –IC = 2 mA
			hFE	110	180	220	–
	Current Gain Group A						–
		B	hFE	200	290	450	–
at –VCE = 5 V, –IC = 100 mA		C	hFE	420	500	800	–
	Current Gain Group A		hFE	–	120	–	–
		B	hFE	–	200	–	–
		C	hFE	–	400	–
Thermal Resistance Junction to Ambient Air			RthJA	–	–	2501)	K/W
Collector Saturation Voltage
at –IC = 10 mA, –IB = 0.5 mA			–VCEsat	–	80	300	mV
at –IC = 100 mA, –IB = 5 mA			–VCEsat	–	250	650	mV
Base Saturation Voltage			–VBEsat
at –IC = 10 mA, –IB = 0.5 mA				–	700	–	mV
at –IC = 100 mA, –IB = 5 mA			–VBEsat	–	900	–	mV
Base-Emitter Voltage			–VBE
at –VCE = 5 V, –IC = 2 mA				600	660	750	mV
at –VCE = 5 V, –IC = 10 mA			–VBE	–	–	800	mV
Collector-Emitter Cutoff Current
at –VCE = 80 V		BC556	–ICES	–	0.2	15	nA
at –VCE = 50 V		BC557	–ICES	–	0.2	15	nA
at –VCE = 30 V		BC558	–ICES	–	0.2	15	nA
at –VCE = 80 V, Tj = 125 °C		BC556	–ICES	–	–	4	μA
at –VCE = 50 V, Tj = 125 °C		BC557	–ICES	–	–	4	μA
at –VCE = 30 V, Tj = 125 °C		BC558, BC559	–ICES	–	–	4	μA

1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.