General Semiconductor BC557C, BC558C, BC558B, BC558A, BC559C Datasheet
...
BC556 THRU BC559
Small Signal Transistors (PNP)
Ratings at
TO-92
.181 (4.6)
.181 (4.6)
min. .492 (12.5)
.022 (0.55)
∅
max.
.098 (2.5)
C
B
Dimensions in inches and (millimeters)
.142 (3.6)
E
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ambient temperature unless otherwise specified
25 °C
FEATURES
♦
PNP Silicon Epitaxial Planar Transistors for
switching and AF amplifier applications.
♦
These transistors are subdivided into
three groups A, B and C according to
their current gain. The type BC556 is available in groups A and B, however, the types
BC557 and BC558 can be supplied in all three
groups. Th e BC559 is a low-noise type availa ble
in all three groups. As complementary types, the
NPN transistors BC546 … BC549 are recomme nded.
♦
On speci al request, these tran sistors ar e also ma nufactured in the pin configuration TO-18.
MECHANICAL DATA
TO-92 Plasti c Package
Case:
Weight:
approx. 0.18 g
Symbol Value Unit
Collector-Base Voltage BC556
BC557
BC558, BC559
Collector-Emitter Voltage BC556
BC557
BC558, BC559
Collector-Emitter Voltage BC556
BC557
BC558, BC559
Emitter-Base Voltage –V
Collector Current –I
Peak Collector Current –I
Peak Base Current –I
Peak Emitter Current I
Power Dissipation at T
= 25 °C P
amb
Junction Temperature T
Storage Temperature Range T
1)
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
–V
–V
–V
–V
–V
–V
–V
–V
–V
EM
CBO
CBO
CBO
CES
CES
CES
CEO
CEO
CEO
EBO
C
CM
BM
tot
j
S
80
50
30
80
50
30
65
45
30
5V
100 mA
200 mA
200 mA
200 mA
1)
500
150 °C
–65 to +150 °C
V
V
V
V
V
V
V
V
V
mW
4/98
BC556 THRU BC559
ELECTRICAL CHARACTERISTICS
Ratings at
h-Parameters
at –V
Current Gain Current Gain Grou p A
Input Impedance Current Gain Grou p A
Output Admittance Current Gain Grou p A
Reverse Voltage Transfer Ratio
DC Current Gain
at –V
at –V
at –V
ambient temperature unless otherwise specified
25 °C
= 5 V, –IC = 2 mA, f = 1 kHz
CE
Current Gain Grou p A
= 5 V, –IC = 10 µA
CE
Current Gain Grou p A
= 5 V, –IC = 2 mA
CE
Current Gain Grou p A
= 5 V, –IC = 100 mA
CE
Current Gain Grou p A
Symbol Min. Typ. Max. Unit
h
B
C
B
C
B
C
B
C
B
C
B
C
B
C
fe
h
fe
h
fe
h
ie
h
ie
h
ie
h
oe
h
oe
h
oe
h
re
h
re
h
re
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
–
–
–
1.6
3.2
6
–
–
–
–
–
–
–
–
–
110
200
420
–
–
–
220
330
600
2.7
4.5
8.7
18
30
60
1.5 · 10
2 · 10
3 · 10
90
150
270
180
290
500
120
200
400
–4
–4
–
–
–
4.5
8.5
15
30
60
110
–4
–
–
–
–
–
–
220
450
800
–
–
–
–
–
–
k
Ω
k
Ω
k
Ω
S
µ
S
µ
S
µ
–
–
–
–
–
–
–
–
–
–
–
–
Thermal Resistance Junction to Ambient Air R
thJA
––2501)K/W
Collector Saturat io n Voltage
= 10 mA, –IB = 0.5 mA
at –I
C
at –I
= 100 mA, –IB = 5 mA
C
–V
–V
CEsat
CEsat
–
–
80
250
Base Saturation Voltage
= 10 mA, –IB = 0.5 mA
at –I
C
= 100 mA, –IB = 5 mA
at –I
C
–V
–V
BEsat
BEsat
–
–
700
900
Base-Emitter Voltage
at –V
at –V
= 5 V, –IC = 2 mA
CE
= 5 V, –IC = 10 mA
CE
–V
–V
BE
BE
600
–
660
–
Collector-Emitter Cutoff Current
at –V
at –V
at –V
at –V
at –V
at –V
1)
= 80 V BC556
CE
= 50 V BC557
CE
= 30 V BC558
CE
= 80 V, Tj = 125 °C BC556
CE
= 50 V, Tj = 125 °C BC557
CE
= 30 V, Tj = 125 °C BC558, BC559
CE
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
–I
–I
–I
–I
–I
–I
CES
CES
CES
CES
CES
CES
–
–
–
–
–
–
0.2
0.2
0.2
–
–
–
300
650
–
–
750
800
15
15
15
4
4
4
mV
mV
mV
mV
mV
mV
nA
nA
nA
A
µ
A
µ
A
µ
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