General Semiconductor BC338-40, BC337-40, BC337-25, BC337-16, BC338-25 Datasheet
...
BC337, BC338
Small Signal Transistor s (NPN)
TO-92
.181 (4.6)
.181 (4.6)
min. .492 (12.5)
∅
.022 (0.55)
max.
.098 (2.5)
C
B
Dimensions in inches and (millimeters)
.142 (3.6)
E
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at
Collector-Emitter Voltage BC337
ambient temperature unless otherwise specified
25 °C
BC338
FEATURES
♦
NPN Silicon Epitaxial Planar Transistors
for switching and amplifier applications. Especially
suitab le for AF-driver stages and low power
output stages.
♦
These types are also available subdivided into three groups -16, -25, and -40,
according to their DC current gain. As complementary types, the PNP transistors
BC327 and BC328 are recommended.
♦
On special request, these transistors are also
manufactured in the pin configuration TO-18.
MECHANICAL DATA
TO-92 Plasti c Package
Case:
Weight:
approx. 0.18 g
Symbol Value Unit
V
V
CES
CES
50
30
V
V
Collector-Emitter Voltage BC337
BC338
Emitter-Base Voltage V
Collector Current I
Peak Collector Current I
Base Current I
Power Dissipation at T
= 25 °C P
amb
Junction Temperature T
Storage Temperature Range T
1)
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
V
V
C
CM
B
CEO
CEO
EBO
tot
j
S
45
25
5V
800 mA
1A
100 mA
625
150 °C
–65 to +150 °C
V
V
1)
mW
4/98
Ratings at
ambient temperature unless otherwise specified
25 °C
DC Current Gain
= 1 V, IC = 100 mA
at V
CE
Current Gain Group -16
at VCE = 1 V, IC = 300 mA
Current Gain Group -16
BC337, BC338
ELECTRICAL CHARACTERISTICS
Symbol Min. Typ. Max. Unit
-25
-40
-25
-40
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
100
160
250
60
100
170
160
250
400
130
200
320
250
400
630
–
–
–
–
–
–
–
–
–
Colle c to r-Emitter Cutoff Current
= 45 V BC337
at V
CE
at V
= 25 V BC338
CE
at V
at V
= 45 V, T
CE
= 25 V, T
CE
= 125 °C BC337
amb
= 125 °C BC338
amb
Collector-Emitt e r Breakdown Vo l ta g e
= 10 mA
at I
C
Collector-Emitt e r Breakdown Vo l ta g e
= 0.1 mA
at I
C
Emitter-Base Breakdown Voltage
= 0.1 mA
at I
E
Collector Saturation Voltage
= 500 mA, IB = 50 mA
at I
C
Base-Emitter Voltage
= 1 V, IC = 300 mA
at V
CE
Gain-Bandwidth Product
= 5 V, IC = 10 mA, f = 50 MHz
at V
CE
Collector-Base Capacitance
= 10 V, f = 1 MHz
at V
CB
BC338
BC337
BC338
BC337
I
CES
I
CES
I
CES
I
CES
V
(BR)CEO
V
(BR)CEO
V
(BR)CES
V
(BR)CES
V
(BR)EBO
V
CEsat
V
BE
f
T
C
CBO
–
–
–
–
20
45
30
50
2
2
–
–
–
–
–
–
100
100
10
10
–
–
–
–
nA
nA
µA
µA
V
V
V
V
5––V
––0.7V
––1.2V
– 100 – MHz
–12–pF
Thermal Resistance Junction to Ambient Air R
1)
Val id provided that leads are kept at ambient temperature at a distance of 2 mm from case
thJA
––2001)K/W
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