General Semiconductor BC328-40, BC328-25, BC327-40, BC328-16, BC327-25 Datasheet
...
BC327, BC328
Small Signal Transistors (PNP)
Ratings at
TO-92
.181 (4.6)
.181 (4.6)
min. .492 (12.5)
∅
.022 (0.55)
max.
.098 (2.5)
C
B
Dimensions in inches and (millimeters)
.142 (3.6)
E
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ambient temperature unless otherwise specified
25 °C
FEATURES
♦
PNP Silicon Epitaxial Plan ar Transistors for
switching and amplifier applications. Especially suit-able for AF-driver stages and
low-power output stages.
♦
These types are also available subdivided
into three groups -16, -25, and -40, according
to their DC current gain. As complementary
types, the NPN transistors BC337 and BC338 are
recommended.
On special request, these transistors are also
♦
manufactured in the pin configuration TO-18.
MECHANICAL DATA
TO-92 Plasti c Package
Case:
Weight:
approx. 0.18 g
Symbol Value Unit
Collector-Emitter Voltage BC327
BC328
Collector-Emitter Voltage BC327
BC328
Emitter-Base Voltage –V
Collector Current –I
Peak Collector Current –I
Base Current –I
Power Dissipation at T
= 25 °C P
amb
Junction Temperature T
Storage Temperature Range T
1)
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
–V
–V
–V
–V
C
CM
B
tot
j
S
CES
CES
CEO
CEO
EBO
50
30
45
25
5V
800 mA
1A
100 mA
1)
625
150 °C
–65 to +150 °C
V
V
V
V
mW
4/98
BC327, BC328
ELECTRICAL CHARACTERISTICS
Ratings at
DC Current Gain
at –V
at –V
Thermal Resistance Junction to Ambient Air R
Collector-Emitter Cutoff Current
at –V
at –V
at –V
at –V
Collector-Emitter Bre a kdown Volt age
at –I
ambient temperature unless otherwise specified
25 °C
= 1 V, –IC = 100 mA
CE
Current Gain Grou p- 16
= 1 V, –IC = 300 mA
CE
Current Gain Grou p- 16
= 45 V BC327
CE
= 25 V BC328
CE
= 45 V, T
CE
= 25 V, T
CE
= 10 mA
C
= 125 °C BC327
amb
= 125 °C BC328
amb
-25
-40
-25
-40
BC327
BC328
Symbol Min. Typ. Max. Unit
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
thJA
–I
CES
–I
CES
–I
CES
–I
CES
–
V
(BR)CEO
100
160
250
60
100
170
160
250
400
130
200
320
250
400
630
–
–
–
– – 200
–
–
–
–
45
25
2
2
–
–
–
–
100
100
10
10
–
–
1)
–
–
–
–
–
–
K/W
nA
nA
A
µ
A
µ
V
V
–
V
(BR)CEO
Collector-Emitter Bre a kdown Volt age
at –I
= 0.1 mA
C
BC327
BC328
–
V
(BR)CES
50
30
–
–
–
V
(BR)CES
Emitter-Base Breakdown Voltage
= 0.1 mA
at –I
E
Collector Saturat ion Voltage
= 500 mA, –IB = 50 mA
at –I
C
Base-Emitter Voltage
at –V
= 1 V, –IC = 300 mA
CE
Gain-Bandwidth Product
at –V
= 5 V, –IC = 10 mA, f = 50 MHz
CE
Collector-Base Capacitance
at –V
1)
= 10 V, f = 1 MHz
CB
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
–
V
(BR)EBO
–V
CEsat
–V
BE
f
T
C
CBO
5––V
––0.7V
––1.2V
– 100 – MHz
–12–pF
–
–
V
V
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