Fujitsu MB3887 Schematic [ru]

FUJITSU SEMICONDUCTOR
DATA SHEET
DS04-27709-4E
ASSP F or Pow er Supply Applications (Secondary battery)
DC/DC Converter IC for Charging Li-ion battery
MB3887
The MB3887 is a DC/DC converter IC suitable for down-conversion, using pulse-width (PWM) charging and enabling output voltage to be set to any desired level from one cell to four cells. These ICs can dynamically control the secondary batter y’s charge current by detecting a voltage drop in an AC adapter in order to keep its power constant (dynamically-controlled charging) . The charging method enables quick charging, f or example, with the A C adapter during operation of a notebook PC.
The MB3887 provides a broad power supply voltage range and low standby current as well as high efficiency, making it ideal for use as a built-in charging device in products such as notebook PC. This product is covered by US Patent Number 6,147,477.

FEATURES

• Detecting a voltage drop in the AC adapter and dynamically controlling the charge current (Dynamically-controlled charging)
(Continued)

PACKAGE

24-pin plastic SSOP
(FPT-24P-M03)
MB3887
(Continued)
• Output voltage setting using external resistor : 1 cell to 4 cells
• High efficiency : 96% (VIN = 19 V, Vo = 16.8 V)
• Wide range of operating supply voltages : 8 V to 25 V
• Output voltage setting accuracy : 4.2 V ± 0.74% (T a = −10 °C to +85 °C , per cell)
• Charging current accuracy : ±5%
• Built-in frequency setting capacitor enables frequency setting using external resistor only
• Oscillation frequency range : 100 kHz to 500 kHz
• Built-in current detection amplifier with wide in-phase input voltage range : 0 V to VCC
• In standby mode, leave output voltage setting resistor open to prevent inefficient current loss
• Built-in standby current function : 0 µA (standard)
• Built-in soft-start function independent of loads
• Built-in totem-pole output stage supporting P-channel MOS FET devices
2

PIN ASSIGNMENT

INC2 :
OUTC2 :
+INE2 :
INE2 :
FB2 :
VREF :
FB1 :
MB3887
(TOP VIEW)
: +INC2
1
2
3
4
5
6
7
24
: GND
23
: CS
22
: VCC (O)
21
: OUT
20
: VH
19
: VCC
18
INE1 :
+INE1 :
OUTC1 :
OUTD :
INC1 :
10
11
12
: RT
8
9
17
16
15
14
13
: INE3
: FB3
: CTL
: +INC1
(FPT-24P-M03)
3
MB3887

PIN DESCRIPTION

Pin No. Symbol I/O Descriptions
1 INC2 I Current detection amplifier (Current Amp2) input terminal. 2 OUTC2 O Current detection amplifier (Current Amp2) output terminal. 3 +INE2 I Error amplifier (Error Amp2) non-inverted input terminal. 4 INE2 I Error amplifier (Error Amp2) inverted input terminal. 5 FB2 O Error amplifier (Error Amp2) output terminal. 6 VREF O Reference voltage output terminal. 7 FB1 O Error amplifier (Error Amp1) output terminal. 8 INE1 I Error amplifier (Error Amp1) inverted input terminal 9 +INE1 I Error amplifier (Error Amp1) non-inverted input terminal.
10 OUTC1 O Current detection amplifier (Current Amp1) output terminal.
With IC in standby mode, this terminal is set to “Hi-Z” to prevent loss
11 OUTD O
of current through output voltage setting resistance.
Set CTL terminal to “H” level to output “L” level. 12 INC1 I Current detection amplifier (Current Amp1) input terminal. 13 +INC1 I Current detection amplifier (Current Amp1) input terminal.
Power supply control terminal. 14 CTL I
15 FB3 O Error amplifier (Error Amp3) output terminal. 16 INE3 I Error amplifier (Error Amp3) inverted input terminal.
17 RT 18 VCC Power supply terminal for reference power supply and control circuit.
19 VH O Power supply terminal for FET drive circuit (VH = VCC − 6 V) . 20 OUT O External FET gate drive terminal. 21 VCC (O) Output circuit power supply terminal. 22 CS Soft-start capacitor connection terminal. 23 GND Ground terminal. 24 +INC2 I Current detection amplifier (Current Amp2) input terminal.
Setting the CTL terminal at “L” level places the IC in the standby
mode.
Triangular-wave oscillation frequency setting resistor connection
terminal.
4

BLOCK DIAGRAM

O
O
)
INE1 UTC1
+INC1
INC1
+INE1
FB1
INE2
8
10
<Current Amp1>
13 12
9
7 4
+
× 20
<Error Amp1>
VREF
+
<PWM Comp.>
+ + +
<OUT>
Drive
MB3887
21
VCC (O
20
OUT
2
UTC2
+INC2
INC2
+INE2
FB2
INE3
OUTD
FB3
CS
<Current Amp2>
24
1 3
5
16
11
15
<SOFT>
VREF
22
+
× 20
10 µA
<Error Amp2>
VREF
+
<Error Amp3>
VREF
− +
+
4.2 V
45 pF
VCC
Bias
Voltage
<VH>
<UVLO>
(VCC UVLO)
4.2 V
<OSC>
17 6 23 RT
<REF> <CTL>
bias
VREF
2.5 V
1.5 V
0.91 V
(0.77 V)
VREF UVLO
VREF
5.0 V
(V
CC
215 k
+
35 k
VCC
GND
6 V)
VCC
19
18 14
VH
VCC CTL
5
MB3887

ABSOLUTE MAXIMUM RATINGS

Parameter Symbol Conditions
Unit
Min Max
Rating
Power supply voltage V Output current I
Peak output current I Power dissipation P
Storage temperature T
CC
OUT
OUT
STG
VCC, VCC (O) terminal*
⎯⎯60 mA
Duty 5 % (t = 1 / f
D
Ta ≤ +25 °C 740*
× Duty)
OSC
⎯−55 +125 °C
2
28 V
700 mA
1
mW
*1 : The package is mounted on the dual-sided epoxy board (10 cm × 10 cm) . *2 : Refer to “ THE SEQUENCE OF THE START-UP AND OFF OF THE POWER SUPPLY” for details. WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
6

RECOMMENDED OPERATING CONDITIONS

MB3887
Parameter Symbol Conditions
Power supply voltage V Reference voltage output
current
I
VH terminal output current I
V
Input voltage
V
OUTD terminal output voltage V OUTD terminal output current I
OUTD
CTL terminal input voltage V Output current I
Peak output current I Oscillation frequency f
Timing resistor R Soft-start capacitor C
CC
REF
VH
INE
INC
OUTD
CTL
OUT
OUT
OSC
T
S
Value
Unit
Min Typ Max
VCC, VCC (O) terminal* 8 25 V
INE1 to INE3, +INE1, +INE2 terminal
+INC1, +INC2, INC1,
INC2 terminal
1 0mA
0 30 mA 0 V
0 V
1.8 V
CC
CC
0 17 V 0 2mA 0 25 V ⎯−45 ⎯+45 mA
Duty 5 % (t = 1 / fosc × Duty)
600 ⎯+600 mA
100 290 500 kHz 27 47 130 kΩ ⎯⎯0.022 1.0 µF
V
VH terminal capacitor C Reference voltage output
capacitor
C
Operating ambient temperature
VH
REF
Ta ⎯−30 +25 +85 °C
⎯⎯0.1 1.0 µF ⎯⎯0.1 1.0 µF
* : Refer to “ THE SEQUENCE OF THE START-UP AND OFF OF THE POWER SUPPLY” for details. WARNING: The recommended operating conditions are required in order to ensure the normal operation of the
semiconductor device. All of the device’s electrical characteristics are warranted when the device is operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges. Operation outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. Users considering application outside the listed conditions are advised to contact their FUJITSU representatives beforehand.
7
MB3887

ELECTRICAL CHARACTERISTICS

Parameter
Sym-
bol
(Ta = +25 °C, VCC = 19 V, VCC (O) = 19 V, VREF = 0 mA)
Pin No.
Conditions
Min Typ Max
Value
Unit
1. Reference voltage block [REF]
2. Under voltage lockout protec­tion circuit block [UVLO]
3. Soft-start block [SOFT]
4. Triangular waveform os­cillator circuit block [OSC]
V
REF1
6Ta = +25 °C 4.967 5.000 5.041 V
Output voltage
V
REF2
6Ta = −10 °C to +85 °C 4.95 5.00 5.05 V Input stability Line 6 VCC = 8 V to 25 V 310mV Load stability Load 6 VREF = 0 mA to 1 mA 110mV Short-circuit output
current
Ios 6 VREF = 1 V 50 25 12 mA
V
TLH
VCC = VCC (O) ,
18
VCC =
6.2 6.4 6.6 V
Threshold voltage
V
Hysteresis width V
V
THL
H
TLH
VCC = VCC (O) ,
18
VCC =
5.2 5.4 5.6 V
18 VCC = VCC (O) 1.0* V
6VREF = 2.6 2.8 3.0 V Threshold voltage
V
Hysteresis width V
Charge current I
Oscillation frequency
f
THL
CS
OSC
6VREF = 2.4 2.6 2.8 V
6 ⎯⎯0.2 V
H
22 ⎯−14 10 −6 µA
20 RT = 47 k 260 290 320 kHz
Frequency temperature
f/fdt 20 Ta = 30 °C to +85 °C 1* ⎯%
stability
Input offset voltage V
3, 4,
IO
FB1 = FB2 = 2 V 15mV
8, 9 Input bias current I In-phase input
5-1. Error amplifier block [Error Amp1, Error Amp2]
voltage range Voltage gain A Frequency
bandwidth
Output voltage
Output source current
Output sink current I
* : Standard design value.
8
3, 4,
B
8, 9
3, 4,
V
CM
8, 9
5, 7 DC 100* dB
V
100 30 nA
0 V
1.8 V
CC
BW 5, 7 AV = 0 dB 2* MHz
V
V
I
SOURCE
5, 7 4.7 4.9 V
FBH
5, 7 ⎯⎯20 200 mV
FBL
5, 7 FB1 = FB2 = 2 V ⎯−2 1mA
5, 7 FB1 = FB2 = 2 V 150 300 ⎯µA
SINK
(Continued)
Parameter
Sym-
bol
MB3887
(Ta = +25 °C, VCC = 19 V, VCC (O) = 19 V, VREF = 0 mA)
Pin No.
Conditions
Min Typ Max
Value
Unit
5-2. Error amplifier block [Error Amp3]
6. Current detec­tion amplifier block [Current Amp1, Current Amp2]
V
Threshold voltage
V
Input current I Voltage gain A Frequency
bandwidth
BW 15 AV = 0 dB 2* MHz
V
Output voltage
V
Output source current
I
SOURCE
Output sink current I OUTD terminal
output leak current OUTD terminal
output ON resistor
I
R
Input offset voltage V
I
+INCH
I
INCH
Input current
I
I
TH1
TH2
INE3
V
FBH
FBL
SINK
LEAK
ON
IO
+INCL
INCL
16 FB3 = 2 V, Ta = +25 °C 4.183 4.200 4.225 V
FB3 = 2 V,
16
Ta = −10 °C to +85 °C
4.169 4.200 4.231 V
16 INE3 = 0 V 100 30 nA
15 DC 100* dB
15 4.7 4.9 V
15 ⎯⎯20 200 mV
15 FB3 = 2 V ⎯−2 1mA
15 FB3 = 2 V 150 300 ⎯µA
11 OUTD = 17 V 01µA
11 OUTD = 1 mA 35 50
1,
+INC1 = +INC2 =
12,
INC1 = INC2 =
13,
3 V to VCC
24
+INC1 = +INC2 =
13,
3 V to VCC,
24
V
= 100 mV
IN
3 ⎯+3mV
20 30 µA
+INC1 = +INC2 =
1, 12
3 V to VCC,
0.1 0.2 µA
Vin = −100 mV
13, 24+INC1 = +INC2 = 0 V,
∆Vin = −100 mV +INC1 = +INC2 = 0 V,
1, 12
Vin = −100 mV
180 120 ⎯µA
195 130 ⎯µA
* : Standard design value
(Continued)
9
MB3887
Parameter
6. Current detection amplifier block [Current Amp1, Current Amp2]
Sym-
bol
V
OUTC1
V
OUTC2
Current detection voltage
V
OUTC3
V
OUTC4
In-phase input voltage range
V
Voltage gain A
Frequency bandwidth
BW 2, 10 AV = 0 dB 2* MHz
V
OUTCH
Output voltage
V
(Ta = +25 °C, VCC = 19 V, VCC (O) = 19 V, VREF = 0 mA)
Pin No.
Conditions
Min Typ Max
Value
+INC1 = +INC2 =
2, 10
3 V to VCC,
1.9 2.0 2.1 V
∆Vin = −100 mV +INC1 = +INC2 =
2, 10
3 V to VCC,
0.34 0.40 0.46 V
∆Vin = −20 mV +INC1 = +INC2 =
2, 10
0 V to 3 V,
1.8 2.0 2.2 V
∆Vin = −100 mV +INC1 = +INC2 =
2, 10
0 V to 3 V,
0.2 0.4 0.6 V
Vin = 20 mV
1,
CM
12, 13,
0 V
24
+INC1 = +INC2 =
2, 10
V
3 V to VCC,
19 20 21 V/V
Vin = 100 mV
2, 10 4.7 4.9 V 2, 10 ⎯⎯20 200 mV
OUTCL
CC
Unit
V
7. PWM comparator block [PWM Comp.]
* : Standard design value
10
Output source current
Output sink cur­rent
Threshold voltage
I
SOURCE
I
SINK
V
TL
TH
V
2, 10 OUTC1 = OUTC2 = 2 V ⎯−2 1mA
2, 10 OUTC1 = OUTC2 = 2 V 150 300 ⎯µA
5, 7,
Duty cycle = 0 % 1.4 1.5 V
15
5, 7,
Duty cycle = 100 %⎯2.5 2.6 V
15
(Continued)
(Continued)
Parameter
Sym-
bol
MB3887
(Ta = +25 °C, VCC = 19 V, VCC (O) = 19 V, VREF = 0 mA)
Pin No.
Conditions
Min Typ Max
Value
Unit
8. Output block [OUT]
9. Control block [CTL]
10. Bias voltage block [VH]
11. General
Output source current
Output sink current
Output ON resistor
I
SOURCE
I
SINK
R
OH
R
OL
20
20 20 OUT = −45 mA 6.5 9.8
20 OUT = 45 mA 5.0 7.5
Rise time tr1 20
Fall time tf1 20
14 IC Active mode 2 25 V
ON
V
CTL input voltage
V I
CTLH
14 IC Standby mode 0 0.8 V
OFF
14 CTL = 5 V 100 150 µA
Input current
I
Output voltage V
Standby current I Power supply cur-
rent
CTLL
CCS
I
14 CTL = 0 V 01µA
19
H
18
18
CC
OUT = 13 V, Duty 5 % (t = 1 / f
× Duty)
OSC
OUT = 19 V, Duty 5 % (t = 1 / f
× Duty)
OSC
OUT = 3300 pF (Si4435 × 1)
OUT = 3300 pF (Si4435 × 1)
VCC = VCC (O) = 8 V to 25 V, VH = 0 to 30 mA
VCC = VCC (O) , CTL = 0 V
VCC = VCC (O) , CTL = 5 V
⎯−400* mA
400* mA
50* ns
50* ns
VCC 6.5 VCC 6.0 VCC 5.5 V
010µA
812mA
* : Standard design value
11
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