FUJITSU SEMICONDUCTOR
DATA SHEET
DS04-27706-2E
ASSP
For Power Supply Applications (Secondary battery)
DC/DC Converter IC for Charging
MB3878
DESCRIPTION
■■■■
The MB3878 is a DC/DC converter IC suitable for down-conversion, using pulse-width (PWM) charging and
enabling output voltage to be set to any desired level from one cell to four cells.
These ICs can dynamically control the secondary batter y’s charge current by detecting a voltage drop in an AC
adaptor in order to keep its power constant (dynamically-controlled charging).
The charging method enables quick charging, f or example, with the A C adaptor during operation of a notebook PC
The MB3878 provides a broad power supply voltage range and low standby current as well as high efficiency,
making it ideal for use as a built-in charging device in products such as notebook PC.
This product is covered by US Patent Number 6,147,477.
FEATURES
■■■■
• Detecting a voltage drop in the AC adaptor and dynamically controlling the charge current
(Dynamically-controlled charging)
• Output voltage setting using external resistor : 1 cell to 4 cells
• High efficiency : 94 %
• Wide range of operating supply voltages : 7 V to 25 V
• Output voltage setting accuracy : 4.2V ± 0.8% (per cell)
• Built-in frequency setting capacitor enables frequency setting using external resistor only
• Oscillator frequency range : 100kHz to 500kHz
PACKAGE
■■■■
24-pin plastic SSOP
(FPT-24P-M03)
(Continued)
MB3878
(Continued)
• Built-in current detector amplifier with wide in-phase input voltage range : 0 V to Vcc
• In standby mode, leave output voltage setting resistor open to prevent inefficient current loss
• Built-in standby current function : 0 µ A (standard)
• Built-in soft-start function
• Built-in totem-pole output stage supporting P-channel MOS FETs devices
PIN ASSIGNMENT
■■■■
(TOP VIEW)
: +INC2
−INC2 :
OUTC2 :
+ INE2 :
1
2
3
24
23
22
: GND
: CS
− INE2 :
FB2 :
VREF :
FB1 :
−INE1 :
+INE1 :
OUTC1 :
OUTD :
− INC1 :
10
11
12
: VCC (O)
4
5
6
7
8
9
21
20
19
18
17
16
15
14
13
: OUT
: VH
: VCC
: RT
: − INE3
: FB3
: CTL
: + INC1
(FPT-24P-M03)
2
PIN DESCRIPTION
■■■■
Pin No. Symbol I/O Descriptions
1 − INC2 I Current detection amplifier (Current Amp. 2) input pin.
2 OUTC2 O Current detection amplifier (Current Amp. 2) output pin.
3 + INE2 I Error amplifier (Error Amp. 2) non-inverted input pin.
4 − INE2 I Error amplifier (Error Amp. 2) inverted input pin.
5 FB2 O Error amplifier (Error Amp. 2) output pin.
6 VREF O Reference voltage output pin.
7 FB1 O Error amplifier (Error Amp. 1) output pin.
8 − INE1 I Error amplifier (Error Amp. 1) inverted input pin
9 + INE1 I Error amplifier (Error Amp. 3) non-inverted input pin.
10 OUTC1 O Current detection amplifier (Current Amp. 1) output pin.
With IC in standby mode, this pin is left open to prevent loss of current
11 OUTD O
12 − INC1 I Current detector amplifier (Current Amp. 1) input pin.
through output voltage setting resistance. Set CTL pin to “H” level and
OUTD pin to “L” level.
MB3878
13 + INC1 I Current detector amplifier (Current Amp. 1) input pin.
14 CTL I
15 FB3 O Error amplifier (Error Amp. 3) output pin.
16 − INE3 I Error amplifier (Error Amp. 3) inverted input pin.
17 RT Triangular-wave oscillation frequency setting resistor connection pin.
18 VCC Power supply pin for reference power supply and control circuit.
19 VH O Power supply pin for FET drive circuit (VH = Vcc − 5 V).
20 OUT O High-side FET gate drive pin.
21 VCC (O) Output circuit power supply pin.
22 CS Soft-start capacitor connection pin.
23 GND Ground pin.
24 + INC2 I Current detection amplifier (Current Amp. 2) input pin.
Power supply control pin.
Setting the CTL pin low places the IC in the standby mode.
3
MB3878
BLOCK DIAGRAM
■■■■
− INE1
OUTC1
+INC1
−INC1
+INE1
FB1
− INE2
8
10
<Current Amp.1>
13
12
9
7
4
+
× 25
−
<Error
Amp.1>
−
+
VREF
<PWM Comp.>
+
+
+
−
<OUT>
Drive
21
20
VCC (O)
OUT
OUTC2
+INC2
−INC2
+INE2
FB2
− INE3
OUTD
FB3
CS
2
<Current Amp.2>
24
1
3
5
16
11
15
<SOFT>
VREF
22
+
× 25
−
1 µ A
<Error
Amp.2>
−
+
<Error
Amp.3>
−
+
+
4.2 V
VREF
VREF
(45 pF)
(VCC UVLO)
bias
<OSC>
17 6 23
RT
<REF> <CTL>
VREF
VCC
Bias
Voltage
<VH>
<UVLO>
0.91 V
(0.77 V)
VREF
UVLO
VREF
5.0 V
(V
2.5 V
1.5 V
215 kΩ
+
35 k Ω
−
VCC
GND
CC − 5 V)
VCC
19
18
14
VH
VCC
CTL
4
ABSOLUTE MAXIMUM RAGINGS
■■■■
MB3878
Parameter Symbol Conditions
Unit
Min Max
Power supply voltage VCC VCC, VCC (O) 28 V
Rating
Output current I
Peak output current I
OUT 60 mA
OUT Duty ≤ 5 % (t = 1 / f OSC × Duty) 500 mA
Power dissipation PD Ta ≤ + 25 °C 740* mW
Storage temperature Tstg − 55 +125 °C
* : The package is mounted on the dual-sided epoxy board (10 cm × 10 cm).
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
RECOMMENDED OPERATING CONDITIONS
■■■■
Value
Parameter
Symbol
Conditions
Min Typ Max
Power supply voltage V
Reference voltage output
current
VH pin output current I
CC VCC, VCC (O) 7 25 V
I
REF − 1 0m A
VH 0 30 mA
VINE − INE1 to − INE3, + INE1, + INE2 0 VCC − 1.8 V
Input voltage
V
INC +INC1, +INC2, −INC1, −INC2 0 V CC V
Unit
OUTD pin output voltage V
OUTD pin output current I
OUTD 0 17 V
OUTD 0 2m A
CTL pin input voltage VCTL 0 25 V
output current I
Peak output current I
OUT − 45 45 mA
OUT Duty ≤ 5 % (t = 1 / fosc × Duty) −450 450 mA
Oscillator frequency fOSC 100 290 500 kHz
Timing resistor R
Soft-start capacitor C
T 33 47 130 kΩ
S 2200 100000 pF
VH pin capacitor CVH 0.1 1.0 µF
Reference voltage output
capacitor
C
REF 0.1 1.0 µF
Operating ambient temperature Ta − 30 + 25 + 85 °C
WARNING: The recommended operating conditions are required in order to ensure the normal operation of the
semiconductor device. All of the device’s electrical characteristics are warranted when the device is
operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges. Operation
outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented on
the data sheet. Users considering application outside the listed conditions are advised to contact their
FUJITSU representatives beforehand.
5
MB3878
ELECTRICAL CHARACTERISTICS
■■■■
Parameter Symbol
(Ta = +25 °C, VCC = 19 V, VCC (O) = 19 V, VREF = 0 mA)
Pin
No.
Conditions
Min Typ Max
Value
Unit
Reference
voltage block
(Ref)
Under voltage
lockout protection
circuit block
(UVLO)
Soft-start block
(SOFT)
Triangular
waveform
oscillator circuit
block (OSC)
Output voltage V
REF 6
Ta = − 30 ° C to + 85 ° C 4.945 5.000 5.055 V
Input stability Line 6 VCC = 7 V to 25 V 31 0 m V
Load stability Load 6 VREF = 0 mA to − 1 mA 11 0 m V
Ta = + 25 ° C 4.995 5.000 5.045 V
Short-circuit
output current
Ios 6 VREF = 1 V −25 −15 −5m A
TLH 18
V
VCC = VCC (O) ,
VCC =
6.1 6.4 6.7 V
Threshold voltage
V
THL 18
VCC = VCC (O) ,
VCC =
5.1 5.4 5.7 V
Hysteresis width VH 18 VCC = VCC (O) 0.7 1.0 1.3 V
TLH 6V R E F = 2.6 2.8 3.0 V
V
Threshold voltage
V
THL 6V R E F = 2.4 2.6 2.8 V
Hysteresis width VH 6VH = V TLH − V THL 0.05 0.20 0.35 V
Charge current I
Oscillation
frequency
CS 22 − 1.3 − 0.8 − 0.5 µA
OSC 20 RT = 47 kΩ 260 290 320 kHz
f
Frequency
temperature
∆ f/fdt 20 Ta = − 30 ° C to + 85 ° C 1* %
stability
Input offset
voltage
V
3, 4,
IO
FB1 = FB2 = 2 V 15 m V
8, 9
Error amplifier
block
(Error Amp.1,
Error Amp.2)
* : Standard design value.
6
Input bias current I
Common mode
input voltage
V
range
Voltage gain A
Frequency
bandwidth
V
Output voltage
VFBL 5, 7 20 200 mV
Output source
current
Output sink
current
I
SOURCE 5, 7 FB1 = FB2 = 2 V − 2.0 − 0.6 mA
I
3, 4,
B
8, 9
3, 4,
CM
8, 9
V 5, 7 DC 100* dB
B
W 5, 7 A V = 0 dB 2.0* MHz
FBH 5, 7 4.7 4.9 V
SINK 5, 7 FB1 = FB2 = 2 V 150 300 µ A
−100 −30 nA
0
VCC −
1.8
(Continued)
V
Parameter Symbol
TH1 16 FB3 = 2 V, Ta = + 25 ° C 4.167 4.200 4.233 V
V
Threshold voltage
V
TH2 16
Input current I
INE3 16 −INE3 = 0 V −100 −30 nA
MB3878
(Ta = +25 °C, VCC = 19 V, VCC (O) = 19 V, VREF = 0 mA)
Pin
No.
Conditions
FB3 = 2 V,
Ta = −30 ° C to +85 °C
Min Typ Max
4.158 4.200 4.242 V
Value
Unit
Error amplifier
block
(Error Amp.3)
Current
detection
amplifier block
(Current Amp.1,
Current Amp.2)
Voltage gain A
Frequency
bandwidth
V
Output voltage
V
Output source
current
Output sink current
OUTD pin output
leak current
OUTD pin output
ON resistor
SOURCE 15 FB3 = 2 V − 2.0 −0.6 mA
I
ISINK 15 FB3 = 2 V 150 300 µ A
I
R
+ INCH
I
− INCH
I
Input current
+ INCL
I
− INCL
I
OUTC1
V
OUTC2
Current detection
voltage
V
V
V
OUTC3
OUTC4
Common mode
input voltage
VCM
range
V 15 DC 100* dB
W 15 A V = 0 dB 2.0* MHz
B
FBH 15 4.7 4.9 V
FBL 15 20 200 mV
LEAK 11 OUTD = 16.8 V 01µA
ON 11 OUTD = 1 mA 70 100 Ω
+ INC1 = + INC2 = 12.7 V,
13,
− INC1 = − INC2 = 12.6 V
24
+ INC1 = + INC2 = 12.7 V,
1,
− INC1 = − INC2 = 12.6 V
12
+ INC1 = + INC2 = 0.1 V,
13,
− INC1 = − INC2 = 0 V
24
+ INC1 = + INC2 = 0.1 V,
1,
− INC1 = − INC2 = 0 V
12
+ INC1 = + INC2 = 12.7 V,
2,
− INC1 = − INC2 = 12.6 V
10
+ INC1 = + INC2 = 12.63 V,
2,
− INC1 = − INC2 = 12.6 V
10
+ INC1 = + INC2 = 0.1 V,
2,
− INC1 = − INC2 = 0 V
10
+ INC1 = + INC2 = 0.03 V,
2,
− INC1 = − INC2 = 0 V
10
10 20 µA
0.1 0.2 µA
−130 −65 µA
−140 −70 µA
2.25 2.5 2.75 V
0.50 0.75 1.00 V
1.25 2.50 3.75 V
0.125 0.750 1.375 V
1,
12,
13,
0 Vcc V
24
Voltage gain A
Frequency
bandwidth
* : Standard design value.
2,
V
B
W
+INC1 = +INC2 = 12.7 V,
−INC1 = −INC2 = 12.6 V
10
2,
AV = 0 dB 2.0* MHz
10
22.5 25 27.5 V/V
(Continued)
7
MB3878
(Continued)
Parameter Symbol
Current detection
amplifier block
(Current Amp.1,
Current Amp.2)
PWM comparator
block
(PWM Comp.)
Output voltage
Output source
current
Output sink
current
Threshold voltage
Output source
current
(Ta = +25 °C, VCC = 19 V, VCC (O) = 19 V, VREF = 0 mA)
Pin
No.
OUTCH 2, 10 4.7 4.9 V
V
V
OUTCL 2, 10 20 200 mV
I
SOURCE 2, 10 OUTC1 = OUTC2 = 2 V − 2.0 − 0.6 mA
Conditions
Min Typ Max
Value
Unit
ISINK 2, 10 OUTC1 = OUTC2 = 2 V 150 300 µ A
5, 7,
TL
V
V
TH
I
SOURCE 20
Duty cycle = 0 % 1.4 1.5 V
15
5, 7,
Duty cycle = 100 %2.5 2.6 V
15
OUT = 11 V, Duty ≤ 5 %
(t = 1 / fOSC × Duty)
− 200* mA
Output block
(OUT)
Control block
(CTL)
Bias voltage
block (VH)
General
Output sink
current
Output ON
resistor
I
SINK 20
R
OH 20 OUT = − 45 mA 8.0 12.0 Ω
ROL 20 OUT = 45 mA 6.5 9.7 Ω
Rise time tr1 20
Fall time tf1 20
ON 14 Active mode 2 25 V
V
CTL input voltage
VOFF 14 Standby mode 0 0.8 V
CTLH 14 CTL = 5 V 100 200 µA
I
Input current
I
CTLL 14 CTL = 0 V 01µA
Output voltage VH 19
Standby current I
Power supply
current
CCS
I
CC
18, 19VCC = VCC (O) ,
18, 19VCC = VCC (O) ,
OUT = 16 V, Duty ≤ 5 %
(t = 1 / fOSC × Duty)
OUT = 3300 pF
(equivalent to Si4435 × 1)
OUT = 3300 pF
(equivalent to Si4435 × 1)
VCC = VCC (O)
= 7 V to 25 V,
VH = 0 to 30 mA
CTL = 0 V
CTL = 5 V
200* mA
70* ns
60* ns
VCC −
5.5
VCC −
5.0
VCC −
4.5
01 0 µA
8.0 12.0 mA
V
* : Standard design value
8