FUJITSU MB3759 User Manual

查询MB3759供应商

FUJITSU SEMICONDUCTOR

DATA SHEET

DS04-27200-6E

ASSP For Power Management Applications

BIPOLAR

Switching Regulator Controller

(Switchable between push-pull and single-end functions)

MB3759

DESCRIPTION

■■■■

The MB3759 is a control IC for constant-frequency pulse width modulated switching regulators.
The IC contains most of the functions required for switching regulator control circuits. This reduces both the
component count and assembly work.

FEATURES

■■■■

• Drives a 200 mA load

• Can be set to push-pull or single-end operation

• Prevents double pulses

• Adjustable dead-time

• Error amplifier has wide common phase input range

• Built in a circuit to prevent misoperation due to low power supply voltage.

• Built in an internal 5 V reference voltage with superior voltage reduction characteristics

PACKAGES

■■■■

16-pin plastic DIP

16-pin ceramic DIP

16-pin plastic SOP

(DIP-16P-M04) (DIP-16C-C01) (FPT-16P-M06)

MB3759

PIN ASSIGNMENT

■■■■

(TOP VIEW)

BLOCK DIAGRAM

■■■■

+IN1

−IN1

FB
DT

C
RT

GND

C

1
2
3
4
5

T

6
7
8

1

(

DIP-16P-M04)

(

DIP-16C-C01)

(

FPT-16P-M06)

16
15
14
13
12
11
10

+IN2

−IN2

V

REF

OC
VCC
C2
E2

9

E1

Output
control

OC

13

Dead time

control

RT
C

DT

+

IN1

−IN1
+

IN2

−IN2

6
5

T

=

0.2 V

4

OSC

Q

T

Q

Error amp.1

1
2

16
15

+

A1

−

+

A2

−

PMW comparator

Reference

regurator

11
10

12
14

8

1

C

9

E1
C2
E2

VCC
VREF

GND

7

Error amp.2

3

Feed back

FB

2

ABSOLUTE MAXIMUM RATINGS

■■■■

MB3759

Parameter Symbol

Power supply voltage V
Collector output voltage V
Collector output current I
Amplifier input voltage V

Plastic DIP

Power dissipation

Rating

Condition

Min

CC ——41V
CE ——41V

CE ——250mA

I ——VCC + 0.3 V

Max

Ta ≤ +25 °C — 1000

P

D

Unit

mWCeramic DIP Ta ≤ +60 °C—800

SOP * Ta ≤ +25 °C—620
Operating temperature Top — −30 +85 °C
Storage temperature Tstg — −55 +125 °C

*: When mounted on a 4 cm square double-sided epoxy circuit board (1.5 mm thickness)

The ceramic circuit board is 3 cm x 4 cm (0.5 mm thickness)

WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,

temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.

RECOMMENDED OPERATING CONDITIONS

■■■■

Value

Parameter Symbol

Unit

Min Typ Max

Power supply voltage V
Collector output voltage V

CC 71532V
CE ——40V

Collector output current ICE 5 — 200 mA
Amplifier input voltage VIN −0.3 0 to VR VCC − 2V
FB sink current I

SINK ——0.3mA

FB source current ISOURCE —— 2mA
Reference section output current IREF —510mA
Timing resistor R
Timing capacitor CT 470 1000 10

T 1.8 30 500 kΩ

6

pF
Oscillator frequency fosc 1 40 300 kHz
Operating temperature Top −30 +25 +85 °C

Note: Values are for standard derating conditions. Give consideration to the ambient temperature and power con-

sumption if using a high supply voltage.

WARNING: The recommended operating conditions are required in order to ensure the normal operation of the

semiconductor device. All of the device’s electrical characteristics are warranted when the device is
operated within these ranges.

Always use semiconductor devices within their recommended operating condition ranges. Operation
outside these ranges may adversely affect reliability and could result in device failure.

No warranty is made with respect to uses, operating conditions, or combinations not represented on
the data sheet. Users considering application outside the listed conditions are advised to contact their
FUJITSU representatives beforehand.

3

MB3759

ELECTRICAL CHARACTERISTICS

■■■■

Parameter Symbol Condition

(VCC = 15 V, Ta = +25 °C)

Value

Unit

Min Typ Max

Reference

section

Oscillator

section

Output voltage V
Input regulation ∆V

Load regulation ∆V

Temperature stability ∆V
Short circuit output

current
Reference lockout

voltage
Reference hysteresis

voltage

REF IO = 1 mA 4.75 5.0 5.25 V

R(IN)

R(LD)

R/∆T

I

SC —1540—mA

———4.3—V

———0.3—V

Oscillator frequency fosc
Standard deviation

of frequency
Frequency change

with voltage
Frequency change with

temperature

—

—

∆fosc/∆T

7 V ≤ VCC ≤ 40 V,
Ta = +25

°C

1 mA ≤ IO ≤ 10 mA,
Ta = +25

°C

−20 °C ≤ Ta ≤
+ 85

°C

R

T = 30 kΩ,

C

T = 1000 pF

R

T = 30 kΩ,

C

T = 1000 pF

7 V ≤ V
Ta = +25

CC ≤ 40 V,

°C

−20 °C ≤ Ta ≤
+85

°C

—225mV

— −1 −15 mV

— ±200 ±750 µV/°C

36 40 44 kHz

— ±3— %

— ±0.1 — %

— ±0.01 ±0.03 %/°C

Dead-time

control section

4

Input bias current I
Maximum duty cycle (Each

output)

0% duty

Input

cycle

threshold
voltage

Max. duty
cycle

D 0 ≤ VI ≤ 5.25 V — −2 −10 µA

—V

V

DO ——3.03.3V

V

DM —0——V

I = 04045—%

(Continued)

(Continued)

MB3759

(VCC = 15 V, Ta = +25 °C)

Error

amplifier

section

Parameter Symbol Condition

Input offset voltage V
Input offset current I
Input bias current I
Common-mode input

voltage
Open-loop voltage

amplification
Unity-gain bandwidth BW A
Common-mode

rejection ratio

Output sink

ISINK I

IO VO (pin3) = 2.5 V — ±2 ±10 mV

IO VO (pin3) = 2.5 V — ±25 ±250 nA

I VO (pin3) = 2.5 V — −0.2 −1.0 µA

V

CM 7 V ≤ VCC ≤ 40 V −0.3 — VCC − 2V

A

V 0.5 V ≤ VO ≤ 3.5 V 70 95 — dB

V = 1 — 800 — kHz

CMR V

SINK

CC = 40 V 65 80 — dB

-5 V ≤ VID ≤ -15 mV,
V

O = 0.7 V

current
(pin 3)

ISOURCE I

SOURCE

Collector leakage current I

Emitter leakage current I

15 mV ≤ VID ≤ 5V,
V

O = 3.5 V

VCE = 40 V,

CO

V

CC = 40 V

VCC = VC = 40 V,

EO

V

E = 0

Value

Unit

Min Typ Max

0.3 0.7 — mA

−2 −10 — mA

— — 100 µA

——−100 µA

Output

section

Collector
emitter
saturation
voltage

Emitter
grounded

Emitter
follower

V

V

Output control input
current

PWM

Input threshold voltage V

comparator

section

Input sink current (pin 3) I

Power supply current I

Standby current I

Switching

characteristics

Rise time
Fall time t
Rise time
Fall time t

Emitter
grounded

Emitter
follower

SAT(C) VE = 0, IC = 200 mA — 1.1 1.3 V

SAT(E)

I

VC = 15 V,
I

E = −200 mA

OPC VI = VREF —1.33.5mA

TH 0% Duty — 4 4.5 V

SINK VO (pin3) = 0.7 V 0.3 0.7 — mA

V(pin4) = 2 V,

CC

See Fig-2
V(pin6) = VREF,

CCQ

I/O open

t

R RL = 68 Ω — 100 200 ns
F RL = 68 Ω — 25 100 ns

t

R RL = 68 Ω — 100 200 ns
F RL = 68 Ω — 40 100 ns

—1.52.5 V

—8—mA

—712mA

5

MB3759

TEST CIRCUIT

■■■■

TEST
INPUT

D

V
VC

30 kΩ

1000 pF

50 kΩ

VCC = 15V

DT
FB

R

T

CT

−IN1
+IN1

−IN2
+IN2

OC

GND

VCC

C
E1
C2
E2

VREF

1

150 Ω /2 W

150 Ω /2 W

OUTPUT

OUTPUT

1

2

■■■■ OPERATING TIMING

Voltage at CT

V

C

VD

OUTPUT 1

OUTPUT 2

=

=

3.0 V

0 V

ON ON ON

ON ON ON

ON

6

OSCILLATION FREQUENCY

■■■■

OUTPUT LOGIC TABLE

■■■■

Input (Output Control) Output State

GND Single-ended or parallel output

V

REF Push-pull

f OSC

=

1.2

RT · CT

T : kΩ

R
C

T : µF

fosc : kH

MB3759

Z

7

MB3759

TYPICAL CHARACTERISTICS

■■■■

Reference voltage vs.
power supply voltage

Reference voltages. temperature

6

IO = 1 mA

5

4

3

2

1

Reference voltage VREF (V)

0

010 2030 40

REF

V

∆VREF

Power supply voltage VCC (V)

Oscillator vs. R

1 M

500 k

200 k
100 k

50 k
20 k

10 k

5 k
2 k

Oscillator frequency fOSC (HZ)

1 k

0.1µF

2 k 5 k 10 k 20 k 100 k 200 k 500 k

T, CT

VCC =15 V

CT = 470 pF

0.01µF

RT (Ω)

1000 pF

10

0

5

0

REF (mV)

∆V

−5

Reference voltage change

−10

REF (mV)

∆V

−20

Reference voltage change

−30

−25

Duty ratio vs. dead time control voltage

Duty radio TON / T (%)

VCC = 15 V
I

500 25 75 100

Temperature Ta (°C)

VCC = 15 V

0

CT = 1000 pF
R

10

20

30

40

50

T = 30 kΩ

0

Ta = 0°C

Ta = +25°C

123

Dead time control voltage VD (V)

O = 1 mA

Ta = +70°C

(Continued)

8

Open loop voltage amplification vs. frequency

MB3759

Open loop voltage amplification AV (dB)

100

90
80
70
60
50
40
30
20
10

0

10 100 1 k 10 k 100 k 1 M

Frequency f (H

VCC = 15 V
∆V

O = 3 V

z)

Ta = +70˚C

Low - level output voltage VOL (V)

Output voltage vs. output current

(feed back terminal)

0.8

0.6

0.4

0.2

Ta = 0°C

Ta = +70°C

V

OL

0

0
0

0.5
5

Ta = +25°C

Ta = 0°C

Ta = +25°C

Output current IOL, IOH (mA)

1.0
10

VCC = 15 V

OH

V

1.5
15

5

4

3

2

High - level output voltage VOH (V)

1

I

OL

IOH

Collector saturation voltage VSAT ( C ) (V)

Collector saturation voltage vs.

collector output current

1.2

1.0
Ta = +25°C

0.8

0.6

0.4

0 50 100 150 200

Ta = 0°C

VCC = 15 V

Ta = +70°C

Collector output current IC (mA)

Emitter saturation voltage VSAT (E) (V)

Emitter saturation voltage vs.

emitter output current

1.8

1.6

1.4

1.2

1.0
0 50 100 150 200

Ta = 0°C

Ta = +25°C

Ta = +70°C

VCC = 15 V

Emitter output current IE (mA)

(Continued)

9

MB3759

(Continued)

Output voltage vs. reference voltage

6

5

4

3

2

Output voltage VOUT (V)

1

0

0 1 2 3 6 0 10 20 30 40

5 V

400 Ω

VOUT

8

45

Reference voltage VREF (V)

Power dissipation vs. power supply voltage

Power supply current vs. power supply voltage

10

CC

I

7.5

ICCQ

5

2.5

Power supply current ICC ,ICCQ (mA)

0

Power supply voltage VCC (V)

Power dissipation vs. ambient temperature

1000

Power dissipation PD (mW)

Ta = +25°C

800

600

400

200

0

010203040

(200, 10)

Power supply voltage VCC (V)

(IO, IR)

(mA)

(100, 10)

(200, 5)
(100, 5)

(100, 0)
(0, 0)

1000

800

ceramic DIP

plastic DIP

600

SOP

400

Power dissipation PD (mW)

200

0

0 20 40 60 80 100

Temperature Ta (°C)

10

MB3759

BASIC OPERATION

■■■■

Switching regulators can achieve a high le vel of efficiency . This section describes the basic principles of operation
using a chopper regulator as an example.
As shown in the diagram, diode D provides a current path for the current through inductance L when Q is off.
Transistor Q performs switching and is operated at a frequency that provides a stable output. As the switching
element is saturated when Q is on and cutoff when Q is off, the losses in the switching element are much less
than for a series regulator in which the pass transistor is always in the active state.
While Q is conducting, the input voltage V
L is supplied to the load via diode D. The LC circuit smooths the input to supply the output voltage.

IN is supplied to the LC circuit and when Q is off, the energ y stored in

The output voltage V

VO =

O is given by the following equation.

Ton

Ton + Toff

V

V

IN

IN =

Ton

Q

IN

V

T

Q : ON

D

L

Q : OFF

RL

VO

C

Q: Switching element
D: Flywheel diode

As indicated by the equation, variation in the input voltage is compensated f or b y controlling the duty cycle (Ton/
T). If V

IN drops, the control circuit operates to increase the duty cycle so as to keep the output v oltage constant.

The current through L flows from the input to the output when Q is on and through D when Q is off. Accordingly,
the average input current I

IN is the product of the output current and the duty cycle for Q.

Ton

O

IIN =

I

T

The theoretical conversion efficiency if the switching loss in Q and loss in D are ignored is as follows.

PO

η =

=

=
=

× 100 (%)

PIN

VO · IO
VIN · IIN
V
VIN · IO · Ton / T

100 (%)

·

IN

IO · Ton / T

× 100

× 100

The theoretical conversion efficiency is 100%. In practice , losses occur in the s witching element and elsewhere,
and design decisions to minimize these losses include making the switching frequency as low as practical and
setting an optimum ratio of input to output voltage.

11

MB3759

SWITCHING ELEMENT

■■■■

1. Selection of the Switching Transistor

It can be said that the success or otherwise of a switching regulator is determined by the choice of switching
transistor. Typically, the following parameters are considered in selecting a transistor.

• Withstand voltage

• Current

•Power

• Speed
For the withstand voltage , current, and power, it is necessary to determine that the area of safe oper ation (ASO)

of the intended transistor covers the intended range for these parameters.
The speed (switching speed: rise time tr, storage time tstg, and fall time tf) is related to the efficiency and also
influences the power.
The figures show the transistor load curve and V
The chopper regulator is a relatively easy circuit to deal with as the diode clamps the collector. A peak can be
seen immediately after turn-on. However, this is due to the diode and is explained later.
In an inverter regulator, the diodes on the secondary side act as a clamp . Viewed from the primary side, howev er ,
a leakage inductance is present. This results in an inductive spike which must be tak en account of as it is added
to double the V

IN voltage.

chopper regulator

CE - IC waveforms for chopper and inverter-type regulators.

inverter regulator

IC

IN

VCE

Q

C

I

VCE

L

D

on

off

V

IN

Ton

O

V

C

VCE

t

IN

2 VIN

VIN

D1

L

O

V

C

D2

IC

on

off

V

IN

V

CE

Ton

2 VIN

VCE

t

12

C

I

Ton

t

C

I

Ton

t

MB3759

The figure below shows an e xample of the ASO characteristics for a forward-biased po wer transistor (2SC3058A)
suitable for switching.
Check that the ASO characteristics for the transistor you intend to use fully covers the load curve. Next, check
whether the following conditions are satisfied. If so, the transistor can be expected to perform the switching
operation safely.

• The intended ON time does not exceed the ON-time specified for the ASO characteristic.

• The OFF-time ASO characteristic satisfies the intended operation conditions.

• Derating for the junction temperature has been taken into account.
For a s witching transistor , the junction temperature is closely related to the s witching speed. This is because the

switching speed becomes slower as the temperature increases and this affects the switching losses.

Forward-biased area of safe operation single pulse

2SC3058A (450 V, 30 A)

TC = +25˚C

IC (Pulse) max.

50

IC max.

20
10

5

D.C.

Single pulse

Pw = 500 µs

10 ms

1 ms

2
1

0.5

Collector current IC (A)

0.2

0.1

0.05
5 10 20 50 100 200 500 1000

Collector - emitter voltage VCE (V)

2. Selecting the Diode

Consideration must be given to the s witching speed when selecting the diode. For chopper regulators in particular,
the diode affects the efficiency and noise characteristics and has a big influence on the perfor mance of the
switching regulator.
If the reverse recovery time of the diode is slower than the turn-on time of the transistor, an in-rush current of
more than twice the load current occurs resulting in noise (spikes) and reduced efficiency.
As a rule for diode selection, use a diode with a rev erse recovery time t
t

r.

rr that is sufficiently faster than the transistor

13

MB3759

APPLICATION IN PRACTICAL CIRCUITS

■■■■

1. Error Amplifier Gain Adjustment

Take care that the bias current does not become large when connecting an external circuit to the FB pin (pin 3)
for adjusting the amplifier gain. As the FB pin is biased to the low level by a sink current, the duty cycle of the
output signal will be affected if the current from the external circuit is greater than the amplifier can sink.
The figure below shows a suitable circuit for adjusting the gain.
It is very important that you avoid having a capacitive load connected to the output stage as this will affect the
response time.

OUT

R1

+

REF

V

RIN

R2

−

R

F

Vo

2. Synchronized Oscillator Operation

The oscillator can be halted by connecting the C
internal oscillator and input to the C

T pin.

T pin to the GND pin. If supplying the signal externally, halt the

Using this method, multiple ICs can be used together in synchronized operation. For synchronized operation,
set one IC as the master and connect the other ICs as shown in the diagram.

Master

RT CT VREF RT CT

Slave

14

3. Soft Start

A soft start function can be incorporated by using the dead-time control element.

VREF VREF

R1

R2

D =

V

R1+R2

DT DT

V

Cd

R

MB3759

R2

Rd

Setting the dead-time Incorporating soft start

When the power is turned on, Cd is not yet charged and the DT input is pulled to the V

REF pin causing the output

transistor to turn off. Next, the input v oltage to the DT pin drops in accordance with the Cd, Rd constant causing
the output pulse width to increase steadily, providing stable control circuit operation.
If you wish to use both dead-time and softstart, combine these in an OR configuration.

REF

V

Cd

Rd R2

R1

DT

4. Output Current Limiting (Fallback system using a detection resistor inserted on the output side)
(1) Typical example

VIO

+

−

R3

VREF

O

IO

S

R

R1

D

R5

R2R4

VO

GND

V

VO1

0

0I

L3 IL2

IL1

IO

15

MB3759

• Initial limit current IL1

R3 + R4

RS IL1 =

∴IL1 =

R1

R4

V

REF

R1

R1 + R2

R1 + R2R1RS

O + VEE ) − ( R2 >> R1 )

( V

L2

The condition for VO is:

O –VIO

V
VO

VIO

–

RS

L is to be limited to ±10 %, using equation (1) and only considering the variation

VIO

RS

Eq. (1) (where R2 >> R1)

VO >

As the diode is reverse biased

V

IO is the input offset voltage to the op-amp (-10 mV ≤ VIO ≤ +10 mV) and this causes the variation in IL. Accordingly ,

if for example the variation in I
in the offset voltage gives the following:

1

IO =

RS

R1 + R2

This indicates a setting of 100 mV or more is required.

• Polarity change point I
As this is the point where the diode becomes forward biased, it can be calculated by substituting [R4/(R3+R4)

V

REF - VD] for VO in equation (where VD is the forward voltage of the diode).

R1

IL2 =

R1 + R2

• Final limit current I

R4 / (R3 + R4) · VREF – VD

RS

L3

–

VIO

RS

The limit current for VO = 0 when R2 >> R1 is the point where the voltages on either side of RS and on either
side of R5 are biased.

RS IL3 =

∴IL3 =

R4R5 V

RS

REF − R3R5 VD − R4R5 VD

R3R4 + R3R5 + R4R5

1

1 + (R 3 // R 4) / R5

1

R4

(

R3 + R4

− VIO

REF − VD

V

) −

VIO

RS

(2)

Eq.

R3//R4 is the resistance formed by R3 and R4 in parallel (R3R4/(R3 + R4)). When R3//R4 << R5, equation (2)
becomes:

IL3 C =

RS

(

R3 + R4

REF – VD

V

1

R4

In addition to determining the limit current I

VIO

) –

RS

L3 for VO = 0, R3, R4, R5, and diode D also operate as a starter when

the power is turned on.

• Starter circuit
The figure below shows the case when the starter circuit formed by R3, R4, R5, and D is not present. The output

current I

O after the operation of the current limiting circuit is:

16

VIO

−

RS

When V

IO =

R1 + R2R1RS

O = 0 such as when the power is turned on, the output current IO = -VI O / RS and, if the offset voltage VIO

VO

is positive, the output current is limited to being negative and therefore the output voltage does not rise.
Accordingly, if using a fallback system with a detection resistor inserted in the output, always include a starter
circuit, expect in the cases described later.

IO

RS

R1

+

V

IO

−

R2

(2) Example that does not use a diode

VO

GND

VO

MB3759

O

V

VIO >0 VIO < 0

0

IL1

IO

VREF

R3

VIO

+

−

The output current I

1

IO =

RS

R1

R2

O after current limiting is:

R1

[(

R1 + R2

O

I

RS

R4

–V

R3 + R4

R4

) V

VO

GND

O +

R4

R3 + R4

In this case, a current flows into the ref erence voltage source via R3 and R4 if V

VO

O

V

0

0

REF – VIO

] (R2 >> R1)

R1

R1+R2

R4

>

R3+R4

IL1

O > VREF. To maintain the stability

of the reference voltage, design the circuit such that this does not exceed 200 µA.

R1

R1+R2

<

R4

R3+R4

I

O

17

MB3759

VO

t

VO

0

0

I

L5 I L1

(3) When an external stabilized negative power supply is presen

IO

RS

R1

VIO

+

−

R2

VO

−VEE

*

VO

The output current IO after current limiting is:

IO =

R1

RS1R1 + R2

O + VEE)

(V

If the output is momentarily shorted, V

–

VIO

(R2 >>R1)

RS

O* goes briefly negative. In this case, set the voltage across R1 to

300 mV or less to ensure that a voltage of less than -0.3 V is not applied to the op-amp input.

IO

18

5. Example Power Supply Voltage Supply Circuit
(1) Supplied via a Zener diode

MB3759

VIN

R

C

VZ

VCC = VZ

VCC

MB3759

(2) Supplied via a three-terminal regulator

AC

Three-terminal

regulator

VIN

V

CC

MB3759

VZ

V

CC

MB3759

CC = VIN − VZ

V

6. Example Protection Circuit for Output Transistor

Due to its monolithic IC characteristics, applying a negative voltage greater than the diode voltage ( := 0.5 V) to
the substrate (pin 7) of the MB3759 causes a parasitic effect in the IC which can result in misoperation.

Accordingly, the following measures are required if driving a transfor mer or similar directly from the output
transistor of the IC.

(1) Protect the output transistor from the parasitic effect by using a Schottky barrier diode.

8

9

11

SBD

10

19

MB3759

(2) Provide a bias at the anode-side of the diode to clamp the low level side of the transistor.

8

(3) Drive the transformer via a buffer transistor.

8

9

11

1.2 kΩ

14

7.5 kΩ

= 0.7 V

0.1 µF

VCC

20

7. Typical Application
(1)Chopper regulator

AC 100 V

1 Ω

MB3759

+

15 V

+

+

10 kΩ

16 kΩ

5.1 kΩ

0.22 µF

10 µF

+

47 k

5.1 k

Ω

Ω

10 kΩ

100 kΩ

2.2 kΩ

5 k

Ω

5.6 k

300 Ω

24 V

50 Ω

2 kΩ

CC

V

1

GND

E
C1
C2

E2
RT
CT

OC

20 kΩ

2200 pF

FB

−IN1
+IN1

REF

V

Ω

−IN2
+IN2

DT

1 mH

+

0.1 Ω

2.5 A

2200 µF

21

MB3759

(2) Inverter regulator

AC 100 V

+

33 Ω

100Ω

+

15 V

+

A

24 V

2.5 A

+

2200 µF

10 kΩ

16 kΩ

5.1 kΩ

100Ω

33 Ω

A

CC

FB

−IN1
+IN1

REF

V

−IN2
+IN2

DT

V

GND

E1

C1

C2

E2
RT
C

OC

T

20 kΩ

2200 pF

REF

+

10 µF

0.22 µF

47 k

Ω

5.1 k

Ω

10 kΩ

100 k

2.2 kΩ

5 k

Ω

Ω

5.6 kΩ

300 Ω

0.1 Ω

B

22

B

ORDERING INFORMATION

■■■■

Part number Package Remarks

MB3759P

MB3759C

MB3759PF

MB3759

16-pin plastic DIP

(DIP-16P-M04)

16-pin ceramic DIP

(DIP-16C-C01)

16-pin plastic SOP

(FPT-16P-M06)

23

MB3759

PACKAGE DIMENSIONS

■■■■

16-pin plastic DIP

(DIP-16P-M04)

19.55
.770

+.008
–.012

+0.20
–0.30

INDEX-1

INDEX-2

4.36(.172)MAX

3.00(.118)MIN

+0.30

0.99

–0
+.012

–0

1.27(.050)
MAX

C

1994 FUJITSU LIMITED D16033S-2C-3

.039

1.52
.060 –0

2.54(.100)
TYP

+0.30
–0

+.012

6.20±0.25

(.244±.010)

0.51(.020)MIN

0.46±0.08

(.018±.003)

0.25±0.05

(.010±.002)

7.62(.300)
TYP

15°MAX

Dimensions in mm (inches)

(Continued)

24

(Continued)

16-pin ceramic DIP

(DIP-16C-C01)

19.30
.760

+0.71
–0.15

+.028
–.006

MB3759

R0.64(.025)

REF

5.08(.200)MAX

3.40±0.36

(.134±.014)

+0.05

1.52

–0.10
+.002

.060

–.004

2.54±0.25

(.100±.010)

1.27(.050)
MAX

C

1994 FUJITSU LIMITED D16011SC-2-3

17.78(.700)REF

0.81(.032)
TYP

6.30
.248

0.46
.018

+0.30
–0.10
+.012
–.004

0.81±0.30

(.032±.012)

+0.13
–0.08

+.005
–.003

0.25
.010

+0.10
–0.05

+.004
–.002

+0.36

7.90

–0.15
+.014

.311

–.006

0°

7.62(.300)
TYP

15°

Dimensions in mm (inches)

(Continued)

25

MB3759

(Continued)

16-pin plastic SOP

(FPT-16P-M06)

10.15

+0.25
–0.20

.400

+.010
–.008

"B"

(.209±.012) (.307±.016)

7.80±0.405.30±0.30

2.25(.089)MAX

(Mounting height)

0.05(.002)MIN
(STAND OFF)

6.80INDEX
.268

+0.40
–0.20

+.016
–.008

1.27(.050)
TYP

"A"

C

2000 FUJITSU LIMITED F16015S-2C-5

0.45±0.10

(.018±.004)

0.10(.004)

8.89(.350)REF

Ø0.13(.005)

+0.05
–0.02

M

Details of "A" part

0.40(.016)

0.20(.008)

0.18(.007)MAX

0.68(.027)MAX

0.15

+.002

.006

–.001

Details of "B" part

0.50±0.20

(.020±.008)

0.15(.006)

0.20(.008)

0.18(.007)MAX

0.68(.027)MAX

Dimensions in mm (inches)

26

MB3759

FUJITSU LIMITED

For further information please contact:

Japan

FUJITSU LIMITED
Corporate Global Business Support Division
Electronic Devices
KAWASAKI PLANT, 4-1-1, Kamikodanaka,
Nakahara-ku, Kawasaki-shi,
Kanagawa 211-8588, Japan
Tel: [phone]
Fax: [phone]

http://www.fujitsu.co.jp/

North and South America

FUJITSU MICROELECTRONICS, INC.
3545 North First Street,
San Jose, CA 95134-1804, U.S.A.
Tel: [phone]
Fax: [phone]

Customer Response Center

Mon. - Fri.: 7 am - 5 pm (PST)

Tel: [phone]
Fax: [phone]

http://www.fujitsumicro.com/

Europe

FUJITSU MICROELECTRONICS EUR OPE GmbH
Am Siebenstein 6-10,
D-63303 Dreieich-Buchschlag,
Germany
Tel: [phone]
Fax: [phone]

http://www.fujitsu-fme.com/

Asia Pacific

FUJITSU MICROELECTRONICS ASIA PTE. LTD.
#05-08, 151 Lorong Chuan,
New Tech Park,
Singapore 556741
Tel: [phone]
Fax: [phone]

http://www.fmap.com.sg/

Korea

FUJITSU MICROELECTRONICS K OREA LTD.
1702 KOSMO TOWER, 1002 Daechi-Dong,
Kangnam-Gu,Seoul 135-280
Korea
Tel: [phone]
Fax: [phone]

All Rights Reserved.

The contents of this document are subject to change without notice.
Customers are advised to consult with FUJITSU sales
representatives before ordering.

The information and circuit diagrams in this document are
presented as examples of semiconductor device applications, and
are not intended to be incorporated in devices for actual use. Also,
FUJITSU is unable to assume responsibility for infringement of
any patent rights or other rights of third parties arising from the use
of this information or circuit diagrams.

The contents of this document may not be reproduced or copied
without the permission of FUJITSU LIMITED.

FUJITSU semiconductor devices are intended for use in standard
applications (computers, office automation and other office
equipments, industrial, communications, and measurement
equipments, personal or household devices, etc.).
CAUTION:
Customers considering the use of our products in special
applications where failure or abnormal operation may directly
affect human lives or cause physical injury or property damage, or
where extremely high levels of reliability are demanded (such as
aerospace systems, atomic energy controls, sea floor repeaters,
vehicle operating controls, medical devices for life support, etc.)
are requested to consult with FUJITSU sales representatives before
such use. The company will not be responsible for damages arising
from such use without prior approval.

Any semiconductor devices have inherently a certain rate of failure.
You must protect against injury, damage or loss from such failures
by incorporating safety design measures into your facility and
equipment such as redundancy, fire protection, and prevention of
over-current levels and other abnormal operating conditions.

If any products described in this document represent goods or
technologies subject to certain restrictions on export under the
Foreign Exchange and Foreign Trade Control Law of Japan, the
prior authorization by Japanese government should be required for
export of those products from Japan.

F0006

 FUJITSU LIMITED Printed in Japan