FUJITSU MB3759 User Manual
查询MB3759供应商
FUJITSU SEMICONDUCTOR
DATA SHEET
DS04-27200-6E
ASSP For Power Management Applications
BIPOLAR
Switching Regulator Controller
(Switchable between push-pull and single-end functions)
MB3759
DESCRIPTION
■■■■
The MB3759 is a control IC for constant-frequency pulse width modulated switching regulators.
The IC contains most of the functions required for switching regulator control circuits. This reduces both the
component count and assembly work.
FEATURES
■■■■
• Drives a 200 mA load
• Can be set to push-pull or single-end operation
• Prevents double pulses
• Adjustable dead-time
• Error amplifier has wide common phase input range
• Built in a circuit to prevent misoperation due to low power supply voltage.
• Built in an internal 5 V reference voltage with superior voltage reduction characteristics
PACKAGES
■■■■
16-pin plastic DIP
16-pin ceramic DIP
16-pin plastic SOP
(DIP-16P-M04) (DIP-16C-C01) (FPT-16P-M06)
MB3759
PIN ASSIGNMENT
■■■■
(TOP VIEW)
BLOCK DIAGRAM
■■■■
+IN1
−IN1
FB
DT
C
RT
GND
C
1
2
3
4
5
T
6
7
8
1
(
DIP-16P-M04)
(
DIP-16C-C01)
(
FPT-16P-M06)
16
15
14
13
12
11
10
+IN2
−IN2
V
REF
OC
VCC
C2
E2
9
E1
Output
control
OC
13
Dead time
control
RT
C
DT
+
IN1
−IN1
+
IN2
−IN2
6
5
T
=
0.2 V
4
OSC
Q
T
Q
Error amp.1
1
2
16
15
+
A1
−
+
A2
−
PMW comparator
Reference
regurator
11
10
12
14
8
1
C
9
E1
C2
E2
VCC
VREF
GND
7
Error amp.2
3
Feed back
FB
2
ABSOLUTE MAXIMUM RATINGS
■■■■
MB3759
Parameter Symbol
Power supply voltage V
Collector output voltage V
Collector output current I
Amplifier input voltage V
Plastic DIP
Power dissipation
Rating
Condition
Min
CC ——41V
CE ——41V
CE ——250mA
I ——VCC + 0.3 V
Max
Ta ≤ +25 °C — 1000
P
D
Unit
mWCeramic DIP Ta ≤ +60 °C—800
SOP * Ta ≤ +25 °C—620
Operating temperature Top — −30 +85 °C
Storage temperature Tstg — −55 +125 °C
*: When mounted on a 4 cm square double-sided epoxy circuit board (1.5 mm thickness)
The ceramic circuit board is 3 cm x 4 cm (0.5 mm thickness)
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
RECOMMENDED OPERATING CONDITIONS
■■■■
Value
Parameter Symbol
Unit
Min Typ Max
Power supply voltage V
Collector output voltage V
CC 71532V
CE ——40V
Collector output current ICE 5 — 200 mA
Amplifier input voltage VIN −0.3 0 to VR VCC − 2V
FB sink current I
SINK ——0.3mA
FB source current ISOURCE —— 2mA
Reference section output current IREF —510mA
Timing resistor R
Timing capacitor CT 470 1000 10
T 1.8 30 500 kΩ
6
pF
Oscillator frequency fosc 1 40 300 kHz
Operating temperature Top −30 +25 +85 °C
Note: Values are for standard derating conditions. Give consideration to the ambient temperature and power con-
sumption if using a high supply voltage.
WARNING: The recommended operating conditions are required in order to ensure the normal operation of the
semiconductor device. All of the device’s electrical characteristics are warranted when the device is
operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges. Operation
outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented on
the data sheet. Users considering application outside the listed conditions are advised to contact their
FUJITSU representatives beforehand.
3
MB3759
ELECTRICAL CHARACTERISTICS
■■■■
Parameter Symbol Condition
(VCC = 15 V, Ta = +25 °C)
Value
Unit
Min Typ Max
Reference
section
Oscillator
section
Output voltage V
Input regulation ∆V
Load regulation ∆V
Temperature stability ∆V
Short circuit output
current
Reference lockout
voltage
Reference hysteresis
voltage
REF IO = 1 mA 4.75 5.0 5.25 V
R(IN)
R(LD)
R/∆T
I
SC —1540—mA
———4.3—V
———0.3—V
Oscillator frequency fosc
Standard deviation
of frequency
Frequency change
with voltage
Frequency change with
temperature
—
—
∆fosc/∆T
7 V ≤ VCC ≤ 40 V,
Ta = +25
°C
1 mA ≤ IO ≤ 10 mA,
Ta = +25
°C
−20 °C ≤ Ta ≤
+ 85
°C
R
T = 30 kΩ,
C
T = 1000 pF
R
T = 30 kΩ,
C
T = 1000 pF
7 V ≤ V
Ta = +25
CC ≤ 40 V,
°C
−20 °C ≤ Ta ≤
+85
°C
—225mV
— −1 −15 mV
— ±200 ±750 µV/°C
36 40 44 kHz
— ±3— %
— ±0.1 — %
— ±0.01 ±0.03 %/°C
Dead-time
control section
4
Input bias current I
Maximum duty cycle (Each
output)
0% duty
Input
cycle
threshold
voltage
Max. duty
cycle
D 0 ≤ VI ≤ 5.25 V — −2 −10 µA
—V
V
DO ——3.03.3V
V
DM —0——V
I = 04045—%
(Continued)
(Continued)
MB3759
(VCC = 15 V, Ta = +25 °C)
Error
amplifier
section
Parameter Symbol Condition
Input offset voltage V
Input offset current I
Input bias current I
Common-mode input
voltage
Open-loop voltage
amplification
Unity-gain bandwidth BW A
Common-mode
rejection ratio
Output sink
ISINK I
IO VO (pin3) = 2.5 V — ±2 ±10 mV
IO VO (pin3) = 2.5 V — ±25 ±250 nA
I VO (pin3) = 2.5 V — −0.2 −1.0 µA
V
CM 7 V ≤ VCC ≤ 40 V −0.3 — VCC − 2V
A
V 0.5 V ≤ VO ≤ 3.5 V 70 95 — dB
V = 1 — 800 — kHz
CMR V
SINK
CC = 40 V 65 80 — dB
-5 V ≤ VID ≤ -15 mV,
V
O = 0.7 V
current
(pin 3)
ISOURCE I
SOURCE
Collector leakage current I
Emitter leakage current I
15 mV ≤ VID ≤ 5V,
V
O = 3.5 V
VCE = 40 V,
CO
V
CC = 40 V
VCC = VC = 40 V,
EO
V
E = 0
Value
Unit
Min Typ Max
0.3 0.7 — mA
−2 −10 — mA
— — 100 µA
——−100 µA
Output
section
Collector
emitter
saturation
voltage
Emitter
grounded
Emitter
follower
V
V
Output control input
current
PWM
Input threshold voltage V
comparator
section
Input sink current (pin 3) I
Power supply current I
Standby current I
Switching
characteristics
Rise time
Fall time t
Rise time
Fall time t
Emitter
grounded
Emitter
follower
SAT(C) VE = 0, IC = 200 mA — 1.1 1.3 V
SAT(E)
I
VC = 15 V,
I
E = −200 mA
OPC VI = VREF —1.33.5mA
TH 0% Duty — 4 4.5 V
SINK VO (pin3) = 0.7 V 0.3 0.7 — mA
V(pin4) = 2 V,
CC
See Fig-2
V(pin6) = VREF,
CCQ
I/O open
t
R RL = 68 Ω — 100 200 ns
F RL = 68 Ω — 25 100 ns
t
R RL = 68 Ω — 100 200 ns
F RL = 68 Ω — 40 100 ns
—1.52.5 V
—8—mA
—712mA
5
MB3759
TEST CIRCUIT
■■■■
TEST
INPUT
D
V
VC
30 kΩ
1000 pF
50 kΩ
VCC = 15V
DT
FB
R
T
CT
−IN1
+IN1
−IN2
+IN2
OC
GND
VCC
C
E1
C2
E2
VREF
1
150 Ω /2 W
150 Ω /2 W
OUTPUT
OUTPUT
1
2
■■■■ OPERATING TIMING
Voltage at CT
V
C
VD
OUTPUT 1
OUTPUT 2
=
=
3.0 V
0 V
ON ON ON
ON ON ON
ON
6
OSCILLATION FREQUENCY
■■■■
OUTPUT LOGIC TABLE
■■■■
Input (Output Control) Output State
GND Single-ended or parallel output
V
REF Push-pull
f OSC
=
1.2
RT · CT
T : kΩ
R
C
T : µF
fosc : kH
MB3759
Z
7
MB3759
TYPICAL CHARACTERISTICS
■■■■
Reference voltage vs.
power supply voltage
Reference voltages. temperature
6
IO = 1 mA
5
4
3
2
1
Reference voltage VREF (V)
0
010 2030 40
REF
V
∆VREF
Power supply voltage VCC (V)
Oscillator vs. R
1 M
500 k
200 k
100 k
50 k
20 k
10 k
5 k
2 k
Oscillator frequency fOSC (HZ)
1 k
0.1µF
2 k 5 k 10 k 20 k 100 k 200 k 500 k
T, CT
VCC =15 V
CT = 470 pF
0.01µF
RT (Ω)
1000 pF
10
0
5
0
REF (mV)
∆V
−5
Reference voltage change
−10
REF (mV)
∆V
−20
Reference voltage change
−30
−25
Duty ratio vs. dead time control voltage
Duty radio TON / T (%)
VCC = 15 V
I
500 25 75 100
Temperature Ta (°C)
VCC = 15 V
0
CT = 1000 pF
R
10
20
30
40
50
T = 30 kΩ
0
Ta = 0°C
Ta = +25°C
123
Dead time control voltage VD (V)
O = 1 mA
Ta = +70°C
(Continued)
8
Open loop voltage amplification vs. frequency
MB3759
Open loop voltage amplification AV (dB)
100
90
80
70
60
50
40
30
20
10
0
10 100 1 k 10 k 100 k 1 M
Frequency f (H
VCC = 15 V
∆V
O = 3 V
z)
Ta = +70˚C
Low - level output voltage VOL (V)
Output voltage vs. output current
(feed back terminal)
0.8
0.6
0.4
0.2
Ta = 0°C
Ta = +70°C
V
OL
0
0
0
0.5
5
Ta = +25°C
Ta = 0°C
Ta = +25°C
Output current IOL, IOH (mA)
1.0
10
VCC = 15 V
OH
V
1.5
15
5
4
3
2
High - level output voltage VOH (V)
1
I
OL
IOH
Collector saturation voltage VSAT ( C ) (V)
Collector saturation voltage vs.
collector output current
1.2
1.0
Ta = +25°C
0.8
0.6
0.4
0 50 100 150 200
Ta = 0°C
VCC = 15 V
Ta = +70°C
Collector output current IC (mA)
Emitter saturation voltage VSAT (E) (V)
Emitter saturation voltage vs.
emitter output current
1.8
1.6
1.4
1.2
1.0
0 50 100 150 200
Ta = 0°C
Ta = +25°C
Ta = +70°C
VCC = 15 V
Emitter output current IE (mA)
(Continued)
9
Loading...