Fairchild Semiconductor TIP42B, TIP42A, TIP42C, TIP42 Datasheet
TIP42 SERIES(TIP42/42A/42B/42C)
Medium Power Linear Switching Applications
• Complement to TIP41/41A/41B/41C
TIP42 SERIES(TIP42/42A/42B/42C)
1
TO-220
1.Base 2.Collector 3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
P
C
T
J
T
STG
Collector-Base Voltage : TIP42
Collector-Emitter Voltage : TIP42
Emitter-Base Voltage - 5 V
Collector Current (DC) - 6 A
Collector Current (Pulse) -10 A
Base Current -2 A
Collector Dissipation (TC=25°C) 65 W
Collector Dissipation (Ta=25°C) 2 W
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
V
(sus) * Collector-Emitter Sustaining Voltage
CEO
ICEO
I
CES
IEBO
hFE
(sat) * Collector-Emitter Saturation Voltage IC = -6A, IB = -600mA -1.5 V
V
CE
(sat) * Base-Emitter Saturation Voltage V
V
BE
f
T
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2000 Fairchild Semiconductor International Rev. A, February 2000
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current V
* DC Current Gain V
Current Gain Bandwidth Product V
TC=25°C unless otherwise noted
: TIP42A
: TIP42B
: TIP42C
: TIP42A
: TIP42B
: TIP42C
TC=25°C unless otherwise noted
: TIP42
: TIP42A
: TIP42B
: TIP42C
: TIP42/42A
: TIP42B/42C
: TIP42
: TIP42A
: TIP42B
: TIP42C
- 40
- 60
- 80
- 100
- 40
- 60
- 80
- 100
I
= -30mA, IB = 0 -40
C
-60
-80
-100
= -30V, IB = 0
V
CE
= -60V, IB = 0
V
CE
= -40V, V
V
CE
= -60V, V
V
CE
V
= -80V, V
CE
= -100V, V
V
CE
= -5V, IC = 0 -1 mA
EB
= -4V, IC = -0.3A
CE
= -4V, IC = -3A
V
CE
= -4V, IC = -6A -2.0 V
CE
= -10V, IC = -500mA 3.0 MHz
CE
EB
EB
EB
EB
= 0
= 0
= 0
= 0
-0.7
-0.7mAmA
-400
-400
-400
-400
30
15
V
V
V
V
V
V
V
V
V
V
V
V
µA
µA
µA
µA
75
Typical Characteristics
TIP42 SERIES(TIP42/42A/42B/42C)
1000
100
10
, DC CURRENT GAIN
FE
h
1
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
-100
IC(MAX) (PULSE)
-10
IC(MAX) (DC)
-1
[A], COLLECTOR CURRENT
C
I
-0.1
-1 -10 -100
VCE[V], COLLECTOR-EMITTER VOLTAGE
TIP42
TIP42A
TIP42B
TIP42C
0.5ms
1ms
5ms
VCE = -4V
-2.0
IC/IB = 10
-1.6
VBE(sat)
-1.2
-0.8
(sat)[V], SATURATION VOLTAGE
CE
-0.4
(sat), V
BE
V
-0.0
-0.01 -0.1 -1 -10 -100
VCE(sat)
IC[A], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
100
80
60
40
20
[W], POWER DISSIPATION
C
P
0
0 255075100125150175
TC[oC], CASE TEMPERATURE
Figure 3. Safe Operating Area Figure 4. Power derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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